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Multilevel resistance switching of Ag/Nb-doped SrTiO3/Ti structure

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Abstract

Ag/0.7 wt% Nb-doped SrTiO3 (Nb:STO)/Ti structure was prepared by sputtering Ag and Ti electrodes on a Nb:STO single crystal substrate and the resistance switching (RS) properties were investigated. Reversible multilevel resistance switching behavior was obtained by applying different voltages. The resistance switching (RS) effect comes from the Schottky barrier existed between Ag and Nb:STO interface. The multilevel switching mechanism may be related to the different number of electrons trapped or detrapped by oxygen vacancies (Vo 2+) at the Ag/Nb:STO interface, which can change the width of depletion layer. The temperature dependence on resistance of Ag/Nb:STO/Ti suggests that both high resistance state (HRS) and low resistance state (LRS) are of semiconductor behavior. Substrate annealing in vacuum degrades the RS properties of Ag/Nb:STO/Ti structure due to the increase of Vo 2+ in Nb:STO.

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Acknowledgements

This work was supported by the National Basic Research Program of China (973 Program) (Grant No. 2010CB933501), the National Natural Science Foundation of China (Grant No. 51072182, 51172208, and 60806045), and the Innovative Youth Team of Natural Science Foundation of Zhejiang Province (Grant No. R4090058).

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Authors and Affiliations

  1. Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou, 310018, China

    Y. Zhang, J. X. Shen, S. L. Wang, C. Cui & P. G. Li

  2. Nanometer Measurement Lab, Zhejiang Sci-Tech University, Hangzhou, 310018, China

    Y. Zhang & B. Y. Chen

  3. State Key Laboratory of Information Photonics & Optical Communication, Beijing University Posts and Telecommunications, Beijing, 100876, China

    W. H. Tang

  4. School of Science, Beijing University Posts and Telecommunications, Beijing, 100876, China

    W. H. Tang

  5. Department of Materials Science and Engineering, University of Sheffield, S1 3JD, Sheffield, UK

    W. Shen

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  1. Y. Zhang
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Correspondence to P. G. Li.

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Zhang, Y., Shen, J.X., Wang, S.L. et al. Multilevel resistance switching of Ag/Nb-doped SrTiO3/Ti structure. Appl. Phys. A 109, 219–222 (2012). https://doi.org/10.1007/s00339-012-7036-x

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  • DOI: https://doi.org/10.1007/s00339-012-7036-x

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