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Controllable switching ratio in quantum dot/metal–metal oxide nanostructure based non-volatile memory device

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Abstract

In this paper, we report a facile quantum dot/In–InOx(nanostructure)/quantum dot/In based non-volatile resistive memory device. The solution processed tri-layer structure exhibited bipolar resistive switching with a ratio of 100 between the high-resistance state and low-resistance state. The memory device was stable and functional even after 100,000 cycles of operation and it exhibited good retention characteristics. The ON/OFF switching ratio could be controlled by choosing appropriate metal in the structure. Memory operating mechanism is discussed based on charge trapping in quantum dots with InOx acting as barrier. A comparative study of memory devices consisting of aluminum and titanium in place of indium is presented. The possible reason for the variation in ON/OFF ratio is discussed on the size of the nano-sized grains of the middle metal layer.

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Acknowledgements

This work was supported by the Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Republic of Korea.

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  1. Millimeter-wave INnovation Technology Research Center (MINT), Dongguk University, Seoul, 100-715, Korea

    V. Kannan & J. K. Rhee

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  1. V. Kannan
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  2. J. K. Rhee
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Correspondence to J. K. Rhee.

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Kannan, V., Rhee, J.K. Controllable switching ratio in quantum dot/metal–metal oxide nanostructure based non-volatile memory device. Appl. Phys. A 108, 59–63 (2012). https://doi.org/10.1007/s00339-012-6983-6

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  • DOI: https://doi.org/10.1007/s00339-012-6983-6

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