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Reversible resistance switching properties in Ti-doped polycrystalline Ta2O5 thin films

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Abstract

Unipolar reversible resistance switching effects were found in 5 at% Ti-doped polycrystalline Ta2O5 films with the device structure of Pt/Ti–Ta2O5/Pt. Results suggest that the recovery/rupture of the conductive filaments which are involved in the participation of oxygen vacancies and electrons leads to the resistance switching process. Ti-doped Ta2O5 thin films possess higher resistance whether in low-resistance state or high-resistance state and higher resistance switching ratio than Ta2O5 thin films, where Ti addition plays an important role in the resistance switching process by suppressing the migration of oxygen vacancies via forming an electrically inactive Ti/O–vacancy complex. Excellent retention properties of the high and low resistances under constant stress of applied voltage were obtained.

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Acknowledgements

This work is financially supported by the Shanghai–AM Research and Development Fund (No. 08700740900), the Natural Science Foundation of Shanghai (No. 08ZR1421500) and the Keystone Project of Shanghai Basic Research Program (No. 08JC1420600).

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Authors and Affiliations

  1. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Ding Xi Road, Shanghai, 200050, People’s Republic of China

    Xiliang He, Xiaomin Li, Xiangdong Gao, Weidong Yu, Rui Yang, Xinjun Liu & Xun Cao

  2. Graduate School of the Chinese Academy of Sciences, 19A Yuquanlu, Beijing, 100049, People’s Republic of China

    Xiliang He, Rui Yang & Xun Cao

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  1. Xiliang He
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  2. Xiaomin Li
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  3. Xiangdong Gao
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  4. Weidong Yu
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  5. Rui Yang
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Correspondence to Xiaomin Li.

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He, X., Li, X., Gao, X. et al. Reversible resistance switching properties in Ti-doped polycrystalline Ta2O5 thin films. Appl. Phys. A 108, 177–183 (2012). https://doi.org/10.1007/s00339-012-6868-8

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