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Physical characterization of Ge films on polyethylene obtained by pulsed laser deposition

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Abstract

A Nd:YAg laser, operating in fundamental wavelength at 1064 nm, is focused at an intensity of the order of 1010 W/cm2 to ablate a solid Ge target. A Laser Ion Source (LIS) system is employed to produce ion emission at high directionality, high current, high rate of production and high charge states.

LIS is used to implant and/or to deposit Ge ions in polyethylene (UHMWPE). Mechanical (roughness, wetting ability and microhardness), optical (reflectivity and transmission) and electrical properties (resistivity) were investigated, in comparison to the pristine values, in order to reach understanding of the ion implantation/deposition effects as a function of the irradiation ion dose.

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Authors and Affiliations

  1. INFN-Laboratori Nazionali del Sud, Via S. Sofia 44, 95124, Catania, Italy

    L. Giuffrida & L. Torrisi

  2. Dipartimento di Fisica, Università di Messina, Viale F.S. D’Alcontres 31, 98166, Messina, Italy

    L. Torrisi & M. Cutroneo

  3. Institute of Plasma Physics and Laser Microfusion, Henry Str., Warsaw, Poland

    M. Rosinski

  4. Facoltà di Scienze MM.FF.NN., Università di Messina, Viale F.S. D’Alcontres 31, 98166, Messina, Italy

    F. Caridi

  5. INFN-Sez. CT, Gr. Coll. di ME, Viale F.S. D’Alcontres 31, 98166, Messina, Italy

    F. Caridi & M. Cutroneo

Authors
  1. L. Giuffrida
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  2. L. Torrisi
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  3. M. Rosinski
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  4. F. Caridi
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  5. M. Cutroneo
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Correspondence to F. Caridi.

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Giuffrida, L., Torrisi, L., Rosinski, M. et al. Physical characterization of Ge films on polyethylene obtained by pulsed laser deposition. Appl. Phys. A 107, 469–475 (2012). https://doi.org/10.1007/s00339-012-6764-2

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  • DOI: https://doi.org/10.1007/s00339-012-6764-2

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