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Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si

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Abstract

Metal-organic decomposed lanthanum cerium oxide (La x Ce y O z ) film had been spin-coated on n-type Si substrate. Effects of post-deposition annealing temperature and time on the metal-oxide-semiconductor (MOS) properties of the film were studied. As temperature increased from 400 to 1000°C for 15 minutes dwell time, La x Ce y O z demonstrated a decrease in interface trap density (D it) and total interface trap density (D total), which were related to the formation of SiO x /silicates interfacial layer (IL). The lowest leakage current density and highest dielectric breakdown voltage (V B) was obtained in 1000°C-annealed sample. When longer annealing times (30–120 minutes) were studied on the 1000°C-annealed sample, the sample annealed at 1000°C for 120 min showed the best MOS characteristics with V B of 30 V. Reasons contributing to such observation were discussed.

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References

  1. J.H. Kim, V.A. Ignatova, M. Weisheit, Microelectron. Eng. 86, 357 (2009)

    Article  Google Scholar 

  2. M.S. Rahman, E.K. Evangelou, A. Dimoulas, G. Mavrou, S. Galata, J. Appl. Phys. 103, 064514 (2008)

    Article  ADS  Google Scholar 

  3. P.I. Raisanen, M. Ritala, M. Leskela, J. Mater. Chem. 12, 1415 (2002)

    Article  Google Scholar 

  4. Y.I. Ogita, S. Ohsone, T. Kudoh, F. Sakamoto, Thin Solid Films 516, 836 (2008)

    Article  ADS  Google Scholar 

  5. P. Vitanov, A. Harizanova, T. Ivanova, T. Dimitrova, Thin Solid Films 517, 6327 (2009)

    Article  ADS  Google Scholar 

  6. P. Vitanov, A. Harizanova, T. Ivanova, C. Trapalis, N. Todorova, Mater. Sci. Eng. B 165, 178 (2009)

    Article  Google Scholar 

  7. W.H. Nam, S.W. Rhee, Chem. Vap. Depos. 10, 201 (2004)

    Article  Google Scholar 

  8. P.S. Lysaght, J.C. Woicik, M.A. Sahiner, B.-H. Lee, R. Jammy, J. Non-Cryst. Solids 354, 399 (2008)

    Article  ADS  Google Scholar 

  9. E. Verrelli, D. Tsoukalas, D. Kouvatsos, Phys. Status Solidi 5, 3720 (2008)

    Article  Google Scholar 

  10. J.C. Hackley, T. Gougousi, Thin Solid Films 517, 6576 (2009)

    Article  ADS  Google Scholar 

  11. W.M. He, S. Schuetz, R. Solanki, J. Belot, J. McAndrew, Electrochem. Solid-State Lett. 7, G131 (2004)

    Article  Google Scholar 

  12. S.Y. No, D. Eom, C.S. Hwang, H.J. Kim, J. Appl. Phys. 100, 024111 (2006)

    Article  ADS  Google Scholar 

  13. T.-M. Pan, C.-L. Chen, W.-W. Yeh, W.-J. Lai, Electrochem. Solid-State Lett. 10, H101 (2007)

    Article  Google Scholar 

  14. J.H. Jun, H.J. Kim, D.J. Choi, Ceram. Int. 34, 957 (2008)

    Article  Google Scholar 

  15. A.C. Rastogi, S.B. Desu, J. Electroceram. 13, 121 (2004)

    Article  Google Scholar 

  16. C.W. Niwh, Y.J. Lee, W.C. Lee, Z.K. Yang, A.R. Kortan, M. Hong, J. Kwo, C.-H. Hsu, Appl. Phys. Lett. 92, 0619141 (2008)

    Google Scholar 

  17. T.A. Minh-Tri, D. Briand, B. Boudart, Y. Guhel, Microelectron. Eng. 87, 2158 (2010)

    Article  Google Scholar 

  18. H.J. Quah, K.Y. Cheong, Z. Hassan, Z. Lockman, F.A. Jasni, W.F. Lim, J. Electrochem. Soc. 157, H6 (2010)

    Article  Google Scholar 

  19. M. Wei, K.L. Choy, J. Cryst. Growth 284, 464 (2005)

    Article  ADS  Google Scholar 

  20. M.T. Ta, D. Briand, Y. Guhel, J. Bernard, J.C. Pesant, B. Boudart, Thin Solid Films 517, 450 (2008)

    Article  ADS  Google Scholar 

  21. Y. Zhao, K. Kita, K. Kyuno, A. Toriumi, Appl. Phys. Lett. 89, 2529051 (2006)

    Google Scholar 

  22. J.-B. Cheng, A.-D. Li, Q. -Y Shao, H.-Q. Ling, D. Wu, Y. Wang, Y.-J. Bao, M. Wang, Z.-G. Liu, N.-B. Ming, Appl. Surf. Sci. 233, 91 (2004)

    Article  ADS  Google Scholar 

  23. L. Yan, L.B. Kong, C.K. Ong, Semicond. Sci. Technol. 19, 1 (2004)

    Article  Google Scholar 

  24. K. Kukli, M. Ritala, V. Pore, M. Leskela, T. Sajavaara, R.I. Hegde, D.C. Gilmer, P.J. Tobin, A.C. Jones, H.C. Aspinall, Chem. Vap. Depos. 12, 158 (2006)

    Article  Google Scholar 

  25. Y.-P. Liu, W. Lan, Z.-W. He, Y.-Y. Wang, Chin. Phys. Lett. 23, 2236 (2006)

    Article  ADS  Google Scholar 

  26. J.M. Gaskell, A.C. Jones, H.C. Aspinall, S. Taylor, P. Taechakumput, P.R. Chalker, P.N. Heys, R. Odedra, Appl. Phys. Lett. 91, 1129121 (2007)

    Article  Google Scholar 

  27. C.Z. Zhao, S. Taylor, M. Werner, P.R. Chalker, R.T. Murray, J.M. Gaskell, A.C. Jones, J. Appl. Phys. 105, 0441021 (2009)

    Google Scholar 

  28. J.M. Gaskell, A.C. Jones, P.R. Chalker, M. Werner, H.C. Aspinall, S. Taylor, P. Taechakumput, P.N. Heys, Chem. Vap. Depos. 13, 684 (2007)

    Article  Google Scholar 

  29. Y.F. Loo, S. Taylor, R.T. Murray, A.C. Jones, P.R. Chalker, J. Appl. Phys. 99, 1037041 (2006)

    Article  Google Scholar 

  30. C.Y. Kang, P.D. Kirsch, B.H. Lee, H.-H. Tseng, R. Jammy, IEEE Trans. Device Mater. Reliab. 9, 171 (2009)

    Article  Google Scholar 

  31. H.T. Wang, J.-J. Wang, R. Gordon, J.-S.M. Lehn, H.Z. Li, D.W. Hong, D.V. Shenai, Electrochem. Solid-State Lett. 12, G13 (2009)

    Article  Google Scholar 

  32. C. Zhao, T. Witters, B. Brijis, H. Bender, O. Richard, M. Caymax, T. Heeg, J. Schubert, V.V. Afanas’ev, A. Stesmans, D.G. Schlom, Appl. Phys. Lett. 86, 1329031 (2005)

    Google Scholar 

  33. M. Roeckerath, T. Heeg, J.M.J. Lopes, J. Schubert, S. Mantl, A. Besmehn, P. Myllymaki, L. Niinisto, Thin Solid Films 517, 201 (2008)

    Article  ADS  Google Scholar 

  34. J.Y. Li, H. Dai, X.H. Zhong, Y.F. Zhang, X.Q. Cao, Adv. Eng. Mater. 9, 205 (2007)

    Article  Google Scholar 

  35. Y. Wang, H.B. Guo, S.K. Gong, Ceram. Int. 35, 2639 (2009)

    Article  Google Scholar 

  36. W. Ma, S.K. Gong, H.B. Xu, X.Q. Cao, Scr. Mater. 54, 1505 (2006)

    Article  Google Scholar 

  37. X.Q. Cao, R. Vassen, W. Fischer, F. Tietz, W. Jungen, D. Stover, Adv. Mater. 15, 1438 (2003)

    Article  Google Scholar 

  38. W.F. Lim, K.Y. Cheong, Z. Lockman, Thin Solid Films 519, 5139 (2011)

    Article  ADS  Google Scholar 

  39. E.D. Ozben, J.M.J. Lopes, M. Roeckerath, S. Lenk, B. Hollander, Y. Jia, D.G. Schlom, J. Schubert, S. Mantl, Appl. Phys. Lett. 93, 0529021 (2008)

    Google Scholar 

  40. W.F. Lim, Z. Lockman, K.Y. Cheong, Proc. of 2011 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) (2011), p. 24

    Book  Google Scholar 

  41. W.F. Lim, K.Y. Cheong, Z. Lockman, F.A. Jasni, H.J. Quah, Mater. Sci. Forum 645–648, 837 (2010)

    Article  Google Scholar 

  42. C.-Y. Liu, B.-Y. Chen, T.-Y. Tseng, J. Appl. Phys. 95, 5602 (2004)

    Article  ADS  Google Scholar 

  43. K.Y. Cheong, S. Dimitrijev, J. Han, IEEE Trans. Electron Devices 50, 1433 (2003)

    Article  ADS  Google Scholar 

  44. E. Verrelli, D. Tsoukalas, D. Kouvatsos, Phys. Status Solidi 5, 3720 (2008)

    Article  Google Scholar 

  45. W.F. Lim, K.Y. Cheong, Z. Lockman, Thin Solid Films 519, 5139–5145 (2011)

    Article  ADS  Google Scholar 

  46. D.K. Schroder, Semiconductor Material and Device Characterization (Wiley, New York, 1998)

    Google Scholar 

  47. M. Wagner, T. Heeg, J. Schubert, S. Lenk, S. Mantl, C. Zhao, M. Caymax, S.D. Gendt, Appl. Phys. Lett. 88, 1729011 (2006)

    Article  Google Scholar 

  48. K.J. Wang, K.Y. Cheong, Appl. Surf. Sci. 254, 1981 (2008)

    Article  ADS  Google Scholar 

  49. S. Lombardo, J.H. Stathis, B.P. Linder, K.L. Pey, F. Palumbo, C.H. Tung, J. Appl. Phys. 98, 121301 (2005)

    Article  ADS  Google Scholar 

  50. H. Wong, B. Sen, V. Filip, M.C. Poon, Thin Solid Films 504, 192 (2006)

    Article  ADS  Google Scholar 

  51. M. Lemberger, A. Paskaleva, S. Zurcher, A.J. Bauer, L. Frey, H. Ryssel, Microelectron. Eng. 72, 315 (2004)

    Article  Google Scholar 

  52. M. Hasan, M.S. Jo, M.S. Rahman, H.J. Choi, S.H. Heo, H.S. Hwang, Electrochem. Solid-State Lett. 9, F77 (2006)

    Article  Google Scholar 

  53. F. Wei, H.L. Tu, Y. Wang, S.J. Yue, J. Du, Appl. Phys. Lett. 92, 0129011 (2008)

    Google Scholar 

  54. Y. Wang, F. Wei, S.J. Yue, Z.M. Yang, J. Du, Appl. Phys. Lett. 92, 0129151 (2008)

    Google Scholar 

  55. Z.L. Li, J.P. Xu, P.T. Lai, Appl. Phys. A 95, 689 (2009)

    Article  ADS  Google Scholar 

  56. W.-S. Jeon, S. Yang, C.-S. Lee, S.-W. Kang, J. Electrochem. Soc. 149, C306 (2002)

    Article  Google Scholar 

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Acknowledgements

One of the authors (W.F. Lim) would like to acknowledge financial support given by the Vice Chancellor’s Award, USM-RU-PRGS (8043001), and Malaysia Toray Science Foundation (MTSF) grant (6050205).

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Authors and Affiliations

  1. Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Universiti Sains Malaysia, Engineering Campus, 14300, Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia

    Way Foong Lim, Zainovia Lockman & Kuan Yew Cheong

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  1. Way Foong Lim
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  2. Zainovia Lockman
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Correspondence to Kuan Yew Cheong.

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Lim, W.F., Lockman, Z. & Cheong, K.Y. Metal-oxide-semiconductor characteristics of lanthanum cerium oxide film on Si. Appl. Phys. A 107, 459–467 (2012). https://doi.org/10.1007/s00339-012-6763-3

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