Abstract
Al-doped zinc oxide (AZO) films are prepared on quartz substrates by dual-ion-beam sputtering deposition at room temperature (∼25°C). An assisting argon ion beam (ion energy E i =0–300 eV) directly bombards the substrate surface to modify the properties of AZO films. The effects of assisted-ion beam energy on the characteristics of AZO films were investigated in terms of X-ray diffraction, atomic force microscopy, Raman spectra, Hall measurement and optical transmittance. With increasing assisting-ion beam bombardment, AZO films have a strong improved crystalline quality and increased radiation damage such as oxygen vacancies and zinc interstitials. The lowest resistivity of 4.9×10−3Ω cm and highest transmittance of above 85% in the visible region were obtained under the assisting-ion beam energy 200 eV. It was found that the bandgap of AZO films increased from 3.37 to 3.59 eV when the assisting-ion beam energy increased from 0 to 300 eV.
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Acknowledgements
This work is supported by the National Natural Science Foundation of China (No. 10975106), the Science & Technology Plan Program of Suzhou City, Jiangsu Province, China (SYJG0901), the Students Innovative Experiment Plan Program of Soochow University, China (5731500910), Qing Lan Project, A Project Funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions, Natural Science Foundation of Jiangsu Province for the Higher Education Institutions (11KJB140011), and The Program for graduates Research & Innovation in University of Jiangsu Province (No. CXZZ11_0085).
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Jin, C.G., Yu, T., Wu, Z.F. et al. Room-temperature deposition of transparent conductive Al-doped ZnO thin films using low energy ion bombardment. Appl. Phys. A 106, 961–966 (2012). https://doi.org/10.1007/s00339-011-6722-4
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DOI: https://doi.org/10.1007/s00339-011-6722-4