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Correlation between implantation defects and dopants in Fe-implanted SiC

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Abstract

SiC single crystals were implanted with Fe ions and the effects of implantation temperature, Fe concentration, and subsequent swift heavy ion irradiation on both dopant and damage depth distributions were evaluated by using RBS and channelling techniques. It is found that an increase of the implantation temperature above the threshold temperature for amorphization can lead to the formation of a broad layer (∼50 nm) containing a large concentration of implanted Fe atoms (∼2 at.%) but almost free of implantation defects. This particular configuration is likely due to dynamic annealing during implantation combined with defect annihilation at the surface. It is only observed when the implanted species concentration does not exceed a critical value (which lies between 2 and 5 at.% in the present system). Post-implantation swift heavy ion irradiation leads to a further decrease of the damage level, while the Fe distribution is not affected. The Fe substitutional fraction has been evaluated in the different tested conditions. A maximum value of ∼50% is found when implantation is performed at the temperature above that required to prevent amorphization (470 K in the present system). Swift-heavy ion irradiation seems to induce Fe atoms relocation at substitutional positions.

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Acknowledgements

Authors would like to thank Michel Drouet (Pprime Institute) for Fe implantations, and the SEMIRAMIS staff (CSNSM) for their assistance during RBS/C measurements.

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Authors and Affiliations

  1. Département de Physique et Mécanique des Matériaux, SP2MI, Téléport 2, Institut Pprime, UPR 3346, CNRS, Université de Poitiers, ENSMA, Boulevard Marie et Pierre Curie, BP 30179, 86962, FUTUROSCOPE-Chasseneuil Cedex, France

    A. Declémy, C. Dupeyrat & D. Eyidi

  2. Centre de spectrométrie Nucléaire et de Spectrométrie de Masse (CSNSM), Univ. Paris-Sud, CNRS-IN2P3, 91405, Orsay-Cedex, France

    A. Debelle & L. Thomé

  3. Centre de Recherche sur les Matériaux, les Ions et la Photonique (CIMAP), CEA-CNRS-ENSICAEN, BP 5133, Bd Henri Becquerel, 14070, Caen Cedex 5, France

    I. Monnet

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  1. A. Declémy
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  2. A. Debelle
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  3. C. Dupeyrat
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  4. L. Thomé
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  6. D. Eyidi
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Correspondence to A. Debelle.

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Declémy, A., Debelle, A., Dupeyrat, C. et al. Correlation between implantation defects and dopants in Fe-implanted SiC. Appl. Phys. A 106, 679–685 (2012). https://doi.org/10.1007/s00339-011-6660-1

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  • DOI: https://doi.org/10.1007/s00339-011-6660-1

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