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Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows

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Abstract

Wurtzite (w) and zincblende (zb) InN films have been grown on (011) SrTiO3 (STO) substrates by metal-organic chemical vapor deposition, the epitaxial relationships and optical properties are characterized by X-ray diffraction (XRD), absorption and photoluminescence (PL). Based on XRD θ–2θ and Φ scanning results, the epitaxial relationships between (w- and zb-) InN films and STO substrates are determined, that is, (0001)[1120] w-InN//(011)[100]STO and \((100)[011]_{\mathit{zb}\mbox{-}\mathrm{InN}}//(011)[100]_{\mathrm{STO}}\). Compared with the w-InN films, the zb-InN films exhibit a red shift in absorption edge and PL spectra, and a much narrower and stronger PL spectrum, implying a better optical quality of zb-InN films. The structure transition is supposed to be due to the difference in atom and bond areal density between the crystal plane of w-InN(0001) and zb-InN(100).

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Authors and Affiliations

  1. Key Laboratory of Semiconductor Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, P.R. China

    C. H. Jia, Y. H. Chen, B. Zhang, X. L. Liu, S. Y. Yang & Z. G. Wang

  2. Key Laboratory of Photovoltaic Materials of Henan Province and School of Physics & Electronics, Henan University, Kaifeng, 475004, P.R. China

    C. H. Jia & W. F. Zhang

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  1. C. H. Jia
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  2. Y. H. Chen
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  3. B. Zhang
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  4. X. L. Liu
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  5. S. Y. Yang
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  6. W. F. Zhang
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  7. Z. G. Wang
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Correspondence to Y. H. Chen.

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Jia, C.H., Chen, Y.H., Zhang, B. et al. Wurtzite to zincblende transition of InN films on (011) SrTiO3 by decreasing trimethylindium flows. Appl. Phys. A 106, 655–659 (2012). https://doi.org/10.1007/s00339-011-6644-1

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  • DOI: https://doi.org/10.1007/s00339-011-6644-1

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