Abstract
Thin films of silicon carbide (SiC) have been prepared by means of pulsed laser deposition (PLD) on sapphire (Al2O3) and Si(100) substrates with a Nd-YAG laser 1064 nm. We achieved the growth of cubic silicon carbide (3C-SiC) films at the temperatures of 650°C from a SiC target in vacuum. The as-deposited films are morphologically and structurally characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD). The use of off-axis PLD method placing the sample at 90° with respect to the target leads to a good quality smooth film.
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References
G. Muller, G. Krotz, E. Niemann, Sens. Actuators A, Phys. 43, 259–268 (1994)
D.M. Brown, E. Downey, M. Grezzo, J. Kretchmer, V. Krishnamethy, W. Hennessy, G. Michon, Solid-State Electron. 59, 1531–1542 (1996)
J.W. Palmour, J.A. Edmond, H.S. Kong, C.H. Carter Jr., Physica B 185, 461–465 (1993)
S. Sheng, M.G. Spencer, X. Tang, P. Zhou, W. Wongchoitgul, C. Taylor, G.L. Harris, Mater. Sci. Eng. B 46, 147–151 (1997)
D. Garoli, F. Frassetto, G. Monaco, P. Nicolosi, M.-G. Pelizzo, F. Rigato, V. Rigato, A. Giglia, S. Nannarone, Appl. Opt. 45(22), 5642–5650 (2006)
J.B. Kortright, D.L. Windt, Appl. Opt. 27, 2841–2846 (1988)
R.A.M. Keski-Kuha, J.I. Larruquert, Appl. Opt. 39, 2772–2781 (2000)
K. Wilhelm, W. Curdt, E. Marsch, U. Schuhle, A. Gabriel, P. Lemaire, J.-C. Vial, M. Grewing, D. Hassler, M.C.E. Huber, S.D. Jordan, A.I. Poland, R.J. Thomas, M. Kuhne, J.G. Timothy, O.H.W. Siegmund, Sol. Phys. 162, 189–231 (1995)
D.J. Sahnow, S.D. Friedman, W.R. Oegerle, H.W. Moos, J.C. Green, O.H. Siegmund, Proc. SPIE 2807, 2–10 (1996)
H. Matsunami, S. Nishino, H. Ono, IEEE Trans. Electron Devices 28, 1235–1236 (1981)
M. Balloch, R.J. Tench, W.J. Sielhause, M.J. Allen, A.L. Conor, D.R. Olander, Appl. Phys. Lett. 57, 1540 (1990)
G. Leggieri, A. Luches, M. Martino, A. Perrone, R. Alexandrescu, A. Barborica, E. Gyorgy, I.N. Mihailescu, G. Majni, P. Mengucci, Appl. Surf. Sci. 96–98, 866–896 (1996)
A.S. Gusev, S.M. Ryndya, N.I. Kargin, E.A. Bondarenko, J. Surf. Invest. 4, 374–378 (2010)
C. Ghica, C. Ristoscu, G. Socol, D. Brodoceanu, L.C. Nistor, I.N. Mihailescu, A. Klini, C. Fotakis, Growth and characterization of b-SiC films obtained by fs laser ablation. Appl. Surf. Sci. 252, 4672–4677 (2006)
J. Huang, L. Wang, J. Wen, Y. Wang, C. Lin, M. Ostling, Diam. Relat. Mater. 8, 2099–2102 (1999)
J.S. Pelt, M.E. Ramseya, S.M. Durbin, Thin Solid Films 371, 72–79 (2000)
G. Monaco, M. Gastaldi, P. Nicolosi, M.G. Pelizzo, E. Gilioli, S. Rampino, S. Agnoli, G. Granozzi, N. Manuzzato, Eur. Phys. J. 169, 159–165 (2009)
G. Monaco, M. Suman, M.G. Pelizzo, P. Nicolosi, Proc. SPIE Vol. 7360 (2009)
D.B. Chrisey, G.K. Hubler, Pulsed Laser Deposition of Thin Films (Wiley, New York, 1994)
R. Jordan, D. Cole, J.G. Lunney, Appl. Surf. Sci. 109/110, 403–407 (1997)
J. Narayan, K. Dovidenko, A.K. Sharma, S. Oktyabarsky, J. Appl. Phys. 84, 2597 (1998)
P.R. Willmott, R. Timm, J.R. Huber, Appl. Surf. Sci. 127, 105–110 (1998)
Y.S. Katharria, Sandeep Kumar, R.J. Choudhary, Ram Prakash, F. Singh, N.P. Lalla, D.M. Phase, D. Kanjilal, Thin Solid Films 516, 6083–6087 (2008)
X.A. Fu, J. Dunning, C.A. Zorman, M. Mehregany, Sens. Actuators A, Phys. 119, 169–176 (2005)
J.M. Bennet, L. Mattson, Introduction to Surface Roughness and Scattering (Optical Society of America, New York, 1989)
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Monaco, G., Garoli, D., Natali, M. et al. Synthesis of heteroepytaxial 3C-SiC by means of PLD. Appl. Phys. A 105, 225–231 (2011). https://doi.org/10.1007/s00339-011-6494-x
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DOI: https://doi.org/10.1007/s00339-011-6494-x