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Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films

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Abstract

The hysteretic and reversible resistive-switching effect was observed in La0.7Sr0.3MnO3 films at room temperature. The resistive switching was found to be most obvious in films fabricated at 30 Pa oxygen pressure, and more distinct in films fabricated on SrTiO3 substrates than those fabricated on LaAlO3 substrates. Moreover, La0.7Sr0.3MnO3 films fabricated at a certain oxygen pressure with indium electrodes showed double ‘8’ type current-voltage loops. Some of the results are explained by considering the influence of the interface effect, electrodes and oxygen vacancies, but the mechanism of the double ‘8’ type current-voltage loops remains an open question.

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Authors and Affiliations

  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Zhong-tang Xu, Kui-juan Jin, Can Wang, Hui-bin Lu, Cong Wang, Le Wang & Guo-zhen Yang

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  1. Zhong-tang Xu
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  2. Kui-juan Jin
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  3. Can Wang
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  4. Hui-bin Lu
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  5. Cong Wang
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  6. Le Wang
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  7. Guo-zhen Yang
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Correspondence to Kui-juan Jin.

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Xu, Zt., Jin, Kj., Wang, C. et al. Unusual resistive switching induced by voltage in La0.7Sr0.3MnO3 thin films. Appl. Phys. A 105, 149–152 (2011). https://doi.org/10.1007/s00339-011-6466-1

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  • DOI: https://doi.org/10.1007/s00339-011-6466-1

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