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Influence of Sb on a controlled-growth of aligned ZnO nanowires in nanoparticle-assisted pulsed-laser deposition

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Abstract

Single-crystalline ZnO nanowires on a sapphire substrate have been synthesized by a nanoparticle-assisted pulsed-laser deposition (NAPLD) using a pure and Sb2O3 doped ZnO target. Low density and vertically well-aligned ZnO nanowires were grown on hexagonal cone-shape ZnO cores by introduction of a ZnO buffer layer. More than 90% of the ZnO cores of the Sb-induced ZnO nanowires are formed in the same size of 400 nm. The ZnO nanowires consist of single-crystalline wurtzite ZnO crystal and grow along [0001] direction. The room-temperature photoluminescence spectrum exhibited a strong ultraviolet emission at around 380 nm and a relatively low broad band emission in the visible region, indicating a low concentration of structural defect in the nanowires. Sb can be used as one of the effective additives to control the morphology and alignment of ZnO nanowires synthesized by NAPLD.

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Authors and Affiliations

  1. Department of Electrical Engineering, Graduate School of Information and Science and Electrical Engineering, Kyushu University, 744 Motooka, Nishi-ku, Fukuoka, 819-0395, Japan

    D. Nakamura, K. Okazaki, I. A. Palani, M. Higashihata & T. Okada

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  1. D. Nakamura
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  2. K. Okazaki
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  3. I. A. Palani
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  4. M. Higashihata
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  5. T. Okada
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Correspondence to D. Nakamura.

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Nakamura, D., Okazaki, K., Palani, I.A. et al. Influence of Sb on a controlled-growth of aligned ZnO nanowires in nanoparticle-assisted pulsed-laser deposition. Appl. Phys. A 103, 959–963 (2011). https://doi.org/10.1007/s00339-011-6401-5

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  • DOI: https://doi.org/10.1007/s00339-011-6401-5

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