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Synthesis and characterization of Ag-doped p-type ZnO nanowires

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Abstract

P-type ZnO nanowires with silver (Ag) doping were synthesized via a chemical vapor deposition process. The incorporation of Ag was confirmed by selected-area energy-dispersive x-ray spectroscopy. The formation of acceptor states was demonstrated by temperature and excitation power-dependent photoluminescence measurements. Characterization of field-effect transistors using Ag-doped ZnO nanowires as channels showed p-type conductivity of the nanowires with a hole concentration of 4.9×1017 cm−3 and a carrier mobility of approximately 0.18 cm2 V−1 s−1.

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Authors and Affiliations

  1. Quantum Structures Laboratory, Department of Electrical Engineering, University of California at Riverside, Riverside, CA, 92521, USA

    Guoping Wang, Sheng Chu, Ning Zhan, Huimei Zhou & Jianlin Liu

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  1. Guoping Wang
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  2. Sheng Chu
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  3. Ning Zhan
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  4. Huimei Zhou
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  5. Jianlin Liu
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Correspondence to Jianlin Liu.

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Wang, G., Chu, S., Zhan, N. et al. Synthesis and characterization of Ag-doped p-type ZnO nanowires. Appl. Phys. A 103, 951–954 (2011). https://doi.org/10.1007/s00339-011-6390-4

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  • DOI: https://doi.org/10.1007/s00339-011-6390-4

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