Abstract
We have extended our recent molecular-dynamic simulations of memristors to include the effect of thermal inhomogeneities on mobile ionic species appearing during operation of the device. Simulations show a competition between an attractive short-ranged interaction between oxygen vacancies and an enhanced local temperature in creating/destroying the conducting oxygen channels. Such a competition would strongly affect the performance of the memristive devices.
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Savel’ev, S.E., Alexandrov, A.S., Bratkovsky, A.M. et al. Molecular dynamics simulations of oxide memristors: thermal effects. Appl. Phys. A 102, 891–895 (2011). https://doi.org/10.1007/s00339-011-6293-4
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DOI: https://doi.org/10.1007/s00339-011-6293-4