Abstract
The possibility of controlling near-field radiative heat transfer with the use of silicon carbide thin films supporting surface phonon–polaritons in the infrared spectrum is explored. For this purpose, the local density of electromagnetic states is calculated and analyzed within the nanometric gap formed between two SiC films as well as the radiative heat flux exchanged between the thin layers.
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Francoeur, M., Mengüç, M.P. & Vaillon, R. Control of near-field radiative heat transfer via surface phonon–polariton coupling in thin films. Appl. Phys. A 103, 547–550 (2011). https://doi.org/10.1007/s00339-010-6184-0
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DOI: https://doi.org/10.1007/s00339-010-6184-0