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Highly oriented La2/3Ca1/3MnO3 films grown on silicon-on-insulator substrates by pulsed laser deposition

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Abstract

High quality La2/3Ca1/3MnO4(LCMO) thin films have been deposited on silicon-on-insulator (SOI) substrates only buffered by yt tria-stabilized zirconia (YSZ) by using the pulsed laser deposition (PLD) technique. The results obtained from X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM) and magnetization investigations indicate that the LCMO films are highly oriented both in-plane and out-of-plane. The Curie temperature T c is close to 260 K and the insulator–metal (I–M) transition appears around 220 K. The conducting mechanism at low temperatures is dominated by the electron–magnon scattering. A tensile stress from the film–substrate lattice mismatch results in magnetic ‘easy axes’ in the film plane and the magnetic anisotropy energy increases with cooling. A maximum magnetoresistance (MR) is observed near 190 K, with the external magnetic field either parallel or vertical to the LCMO film plane. Moreover, the large intrinsic high-field magnetoresistance (HFMR) and the very small extrinsic low-field magnetoresistance (LFMR) again reveal that the LCMO films on SOI substrates are highly oriented thin films of good crystallinity.

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Authors and Affiliations

  1. School of Physics and Electronics Science, Shanxi Datong University, Datong, Shanxi, 037009, China

    P. Wang & T. Y. Xie

  2. National Laboratory for Superconductivity, Institute of Physics & Beijing National Laboratory for Condensed Matter Physics, Chinese Academy of Sciences, Beijing, 100190, China

    P. Wang, J. Li, S. L. Li, H. F. Chu & D. N. Zheng

  3. School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    P. L. Lang

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  1. P. Wang
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Correspondence to D. N. Zheng.

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Wang, P., Li, J., Lang, P.L. et al. Highly oriented La2/3Ca1/3MnO3 films grown on silicon-on-insulator substrates by pulsed laser deposition. Appl. Phys. A 102, 449–455 (2011). https://doi.org/10.1007/s00339-010-6174-2

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  • DOI: https://doi.org/10.1007/s00339-010-6174-2

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