Ascent of open-circuit voltage on diamond-like carbon photovoltaic cell by infrared heating-assisted pulsed-laser deposition

Abstract

Phosphorus-doped diamond-like carbon (DLC) films were deposited on quartz and p-type silicon (p-Si) substrates by pulsed-laser deposition. Open-circuit voltage (V _oc) and short-circuit density (I _sc/cm²) from a heating process converted from one type of electrode to another and the two types of electrode pattern are shown by the V–I characteristics. The first heating process was by a ceramic heater, and the other was by an infrared heater. We adopted two electrode patterns, from a bipectinate electrode and a plot pattern electrode, to measure electric photovoltaic characteristics. We were able to upgrade V _oc and I _sc/cm² to 35∼45 mV, and 0.24 μA/cm², respectively, under infrared heating. V _oc by the plot pattern electrode was over 2 V under infrared heating and ceramic heating did not match this on deposition by the PLD method.