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Preparation of few-layer nitrogen-doped graphene nanosheets by DC arc discharge under nitrogen atmosphere of high temperature

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Abstract

Few-layer N-doped graphene nanosheets (GNSs) were prepared by a DC arc discharge under a nitrogen atmosphere of high temperature. HRTEM characterization shows the typical morphology of the several layer GNSs and some GNSs stacking together in the form of terrace. The typically rotational stacking faults can be observed in the GNSs. The Raman spectrum shows the characteristic peak of the graphene. It is confirmed by XRD, EELS, and EDX characterizations that the GNSs are doped with nitrogen. The content of few-layer N-doped GNSs in the column-shaped deposits formed on the top of the cathode is larger than 50 weight %. The formation mechanism of N-doped GNSs is discussed on the foundation of our results and other related published work.

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Author notes

  1. Y. Y. Wang

    Present address: National Nickel and Cobalt Advanced Materials Engineering Research Center, Lanzhou, 737100, P.R. China

Authors and Affiliations

  1. Department of Chemistry, School of Science, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, P.R. China

    L. Guan, Y. Y. Wang & S. Cui

  2. Center of Analysis, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, P.R. China

    L. Cui, K. Lin & X. P. Chen

  3. School of Chemical Engineering and Technology, Tianjin University, No. 92 Weijin Road, Tianjin, 300072, P.R. China

    X. T. Wang, F. M. Jin & F. He

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  1. L. Guan
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Correspondence to S. Cui.

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Guan, L., Cui, L., Lin, K. et al. Preparation of few-layer nitrogen-doped graphene nanosheets by DC arc discharge under nitrogen atmosphere of high temperature. Appl. Phys. A 102, 289–294 (2011). https://doi.org/10.1007/s00339-010-6110-5

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  • DOI: https://doi.org/10.1007/s00339-010-6110-5

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