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Physical and electrical characteristics of metal-organic decomposed CeO2 gate spin-coated on 4H-SiC

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Abstract

The effects of post-deposition annealing temperatures (600–1150°C) in 95%N2–5%H2 ambient on the electrical and physical properties of metal-organic decomposed CeO2 spin-coated on n-type 4H-SiC were investigated. As the annealing temperature increased, oxides changed from polycrystalline to preferred oriented structures and, eventually, to silicate structures. The oxides also showed an incremental increase in surface roughness as annealing temperature increased. The Lorentz-Lorenz law was utilized to determine the density of the oxides. The highest density was obtained by a sample annealed at the highest temperature. Electrical results showed that this sample obtained the lowest leakage current density. Parameters affecting this observation were also investigated.

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Authors and Affiliations

  1. Energy Efficient & Sustainable Semiconductor Research Group, School of Materials and Mineral Resources Engineering, Engineering Campus, Universiti Sains Malaysia, 14300, Nibong Tebal, Seberang Perai Selatan, Penang, Malaysia

    W. F. Lim, K. Y. Cheong & Z. Lockman

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  1. W. F. Lim
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  2. K. Y. Cheong
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Correspondence to K. Y. Cheong.

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Lim, W.F., Cheong, K.Y. & Lockman, Z. Physical and electrical characteristics of metal-organic decomposed CeO2 gate spin-coated on 4H-SiC. Appl. Phys. A 103, 1067–1075 (2011). https://doi.org/10.1007/s00339-010-6039-8

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