Abstract
Amorphous ErSiO films have been fabricated on p-type Si (001) substrates using rf magnetron sputtering technique. X-ray diffraction, high-resolution transmission electron microscopy, and atomic force microscopy were employed to investigate the samples. It is found that ErSiO film exhibits a flat surface, a sharp interface and superior electrical properties after post-deposition annealing in O2 ambience for 30 min at 450°C. The effective dielectric constant of the film is measured to be 14.2, and the effective oxide thickness reaches 1.9 nm, with a low leakage current density of 1.1×10−4 A/cm2 at an electric field of 1 MV cm−1 after annealing at 450°C. The obtained characteristics make the amorphous ErSiO films a promising substitute for SiO2 as a high-k gate dielectric.
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Fang, Z.B., Zhu, Y.Y. & Chen, W. Structure and electrical characterization of amorphous ErSiO films deposited by rf magnetron sputtering on Si (001). Appl. Phys. A 102, 695–698 (2011). https://doi.org/10.1007/s00339-010-5959-7
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DOI: https://doi.org/10.1007/s00339-010-5959-7