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Band gap characterization and photoluminescence properties of SiC nanowires

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Abstract

β-SiC nanowires were synthesized by a simple carbothermal reduction of carbonaceous silica xerogel. The morphology and structure of the nanowires were investigated by X-ray diffraction, scanning electron microscope and transmission electron microscopy. The results showed that the nanowires were hexagonal prism-shaped hierarchical nanostructures. The typical stacking faults and twin defects of SiC nanowires were also observed. Band-gap characterization and photoluminescence properties of SiC nanowires were investigated by UV-vis absorption spectroscopy and fluorescence photometry, respectively. The results showed the SiC nanowire was an indirect transition semiconductor and the band gap energy for the SiC nanowires was 2.85 eV. The photoluminescence peak value at 470 nm (2.64 eV) originating from the SiC nanowires was a little higher than the value of band-gap energy.

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Authors and Affiliations

  1. Department of Physics, Center for Optoelectronics Materials and Devices, Zhejiang Sci-Tech University, Hangzhou, Zhejiang, 310018, China

    Jianjun Chen, Weihua Tang & Lipeng Xin

  2. Center of Materials Engineering, Zhejiang Sci-Tech University, Hangzhou, 310018, China

    Jianjun Chen & Qiang Shi

Authors
  1. Jianjun Chen
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  2. Weihua Tang
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  3. Lipeng Xin
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  4. Qiang Shi
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Correspondence to Jianjun Chen.

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Chen, J., Tang, W., Xin, L. et al. Band gap characterization and photoluminescence properties of SiC nanowires. Appl. Phys. A 102, 213–217 (2011). https://doi.org/10.1007/s00339-010-5943-2

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  • DOI: https://doi.org/10.1007/s00339-010-5943-2

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