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Influence of oxygen pressure on the ferroelectric properties of BiFeO3 thin films on LaNiO3/Si substrates via laser ablation

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Abstract

BiFeO3(BFO) thin films of about 200 nm in thickness have been successfully grown on oxide bottom electrode, LaNiO3(LNO), via pulsed laser ablation. X-ray diffraction spectrum of the as-deposited BFO film reveals a (100) preferred textured structure. The morphology of the BFO film is found to be strongly dependent on oxygen partial pressure in laser ablation. A saturated hysteresis loop with remanent polarization of 42 μC/cm2 and coercive field of 100 kV/cm is obtained at the film deposition at 50 mTorr. The dielectric properties have also been obtained based on the influence of the oxygen pressure.

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Correspondence to L. Lu.

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Yan, F., Zhu, T.J., Lai, M.O. et al. Influence of oxygen pressure on the ferroelectric properties of BiFeO3 thin films on LaNiO3/Si substrates via laser ablation. Appl. Phys. A 101, 651–654 (2010). https://doi.org/10.1007/s00339-010-5918-3

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  • DOI: https://doi.org/10.1007/s00339-010-5918-3

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