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Formation of Schottky-type metal/SrTiO3 junctions and their resistive properties

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Abstract

Motivated by the successful use of strontium titanate with different doping metals for memory cells on the basis of resistive switching and the recent findings on the major importance of oxygen vacancy redistribution in this compound, the present work shows the possibility of a non-volatile resistance change memory based on vacancy-doped SrTiO3. The formation of corresponding metal/SrTiO3−δ junctions (δ>0) in an electric field will be discussed as well as the switching between ohmic and Schottky-type contact behavior. A notable hysteresis in the current–voltage characteristics is used to carry out Write, Read, and Erase operations exemplifying the memory cell properties of such junctions. But whereas the electric field-induced formation of Schottky-type junctions is explainable by oxygen vacancy redistribution, the resistive switching needs to be discussed in terms of vacancies serving as electron trap states at the metal/oxide interface.

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Authors and Affiliations

  1. Institut für Strukturphysik, Technische Universität Dresden, Zellescher Weg 16, 01069, Dresden, Germany

    Hartmut Stöcker & Matthias Zschornak

  2. Institut für Experimentelle Physik, TU Bergakademie Freiberg, Leipziger Straße 23, 09596, Freiberg, Germany

    Hartmut Stöcker, Matthias Zschornak, Juliane Seibt, Florian Hanzig, Susi Wintz, Barbara Abendroth & Dirk C. Meyer

  3. Institut für Theoretische Physik, TU Bergakademie Freiberg, Leipziger Straße 23, 09596, Freiberg, Germany

    Jens Kortus

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  1. Hartmut Stöcker
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Correspondence to Hartmut Stöcker.

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Stöcker, H., Zschornak, M., Seibt, J. et al. Formation of Schottky-type metal/SrTiO3 junctions and their resistive properties. Appl. Phys. A 100, 437–445 (2010). https://doi.org/10.1007/s00339-010-5848-0

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  • DOI: https://doi.org/10.1007/s00339-010-5848-0

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