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Resistive switching in the devices of Ag/amorphous Ag30Ge17Se53 films/Pt

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Abstract

Electric switching and memory effects were observed on devices composed of an Ag30Ge17Se53(AGS) film sandwiched between Ag and Pt electrodes. The amorphous AGS films were prepared by the pulsed-laser deposition method and the lateral size of devices was scaled down to 1 μm by the focused ion beam nanofabrication technique.

The devices were observed to show distinct bistability with the resistance ratio of the off/on states up to 106 and low switch voltage (0.22 V). At least 106 switching cycles were achieved in the “write-read-erase-read” cycle voltage.

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Authors and Affiliations

  1. School of Physics, Huazhong University of Science and Technology, Wuhan, 430074, People’s Republic of China

    L. Chen

  2. Department of Materials Science and Engineering, Nanjing University, Nanjing, 210093, People’s Republic of China

    L. Chen, H. X. Guo, Y. D. Xia & Z. G. Liu

  3. Department of Physics, Nanjing University, Nanjing, 210093, People’s Republic of China

    J. Yin & Z. G. Liu

Authors
  1. L. Chen
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  2. H. X. Guo
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  3. Y. D. Xia
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  4. J. Yin
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  5. Z. G. Liu
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Correspondence to L. Chen.

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Chen, L., Guo, H.X., Xia, Y.D. et al. Resistive switching in the devices of Ag/amorphous Ag30Ge17Se53 films/Pt. Appl. Phys. A 100, 309–313 (2010). https://doi.org/10.1007/s00339-010-5795-9

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  • DOI: https://doi.org/10.1007/s00339-010-5795-9

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