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Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8° off-axis 4H-SiC

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This paper reports on the influence of material defects on the electrical behaviour of AlGaN/GaN heterostructures grown onto off-axis 4H-SiC. A structural characterization revealed the presence of near-surface V-shaped defects, mostly oriented along the miscut direction [11-20]. High electron mobility transistors with the channel oriented along this direction showed a preferential conduction, while a significant reduction of the drain current occurred only along the orthogonal direction. An electrical analysis allowed us to demonstrate the anisotropy of the mobility of the two-dimensional electron gas.

These results are important to predict the optimal device design in AlGaN/GaN heterostructures grown onto misoriented 4H-SiC substrates.

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Correspondence to Fabrizio Roccaforte.

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Roccaforte, F., Weng, MH., Bongiorno, C. et al. Structural defects and device electrical behaviour in AlGaN/GaN heterostructures grown on 8° off-axis 4H-SiC. Appl. Phys. A 100, 197–202 (2010).

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