Abstract
Sn+ irradiations of Ru single-layer mirrors (SLM) simulate conditions of fast-Sn ion exposure in high-intensity 13.5 nm lithography lamps. Ultra-shallow implantation of Sn is measured down to 1–1.5 nm depth for energies between 1–1.3 keV at near-normal incident angles on Ru mirror surfaces. The Sn surface concentration reaches an equilibrium of 55–58% Sn/Ru for near-normal incidence and 36–38% for grazing incidence at approximately 63 degrees with respect to the mirror surface normal. The relative reflectivity at 13.5 nm at 15-degree incidence was measured in-situ during Sn+ irradiation. For near-normal Sn+ exposures the reflectivity is measured to decrease between 4–7% for a total Sn fluence of 1016 cm−2. Theoretical Fresnel reflectivity modeling shows for the same fluence assuming all Sn atoms form a layer on the Ru mirror surface, that the reflectivity loss should be between 15–18% for this dose. Ex-situ absolute 13.5 nm reflectivity data corroborate these results, indicating that implanted energetic Sn atoms mixed with Ru reflect 13.5-nm light differently than theoretically predicted by Fresnel reflectivity models.
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Allain, J.P., Nieto-Perez, M., Hendricks, M.R. et al. Energetic Sn+ irradiation effects on ruthenium mirror specular reflectivity at 13.5-nm. Appl. Phys. A 100, 231–237 (2010). https://doi.org/10.1007/s00339-010-5581-8
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DOI: https://doi.org/10.1007/s00339-010-5581-8