Abstract
GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO x core–shell structures, and we show that coating of GaN nanowires with a TiO x shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm2 and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination.
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Chen, X.Y., Yip, C.T., Fung, M.K. et al. GaN-nanowire-based dye-sensitized solar cells. Appl. Phys. A 100, 15–19 (2010). https://doi.org/10.1007/s00339-010-5580-9
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DOI: https://doi.org/10.1007/s00339-010-5580-9