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Formation and growth mechanism of ripple-like AlN nanowires

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Abstract

Single-crystal ripple-like AlN nanowire with tuned diameter was fabricated through direct reaction aluminum with nitrogen by arc discharge method. The nanowires grow along the [0001] direction and have a radial expansion along the \([10\bar{1}0]\) direction. The periodic variation of the radial expansion toward \([10\bar{1}0]\) direction produces the ripple-like AlN nanowires. The growth mechanism of the AlN nanowires is discussed by considering the Al adlayer diffusion on the polar (0001) surface.

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Authors and Affiliations

  1. School of Science, Shenyang Ligong University, Shenyang, 110168, People’s Republic of China

    Longhai Shen

  2. State key Laboratory of Superhard Materials, Jilin University, Changchun, 130012, People’s Republic of China

    Xuefei Li, Qiliang Cui, Bingbing Liu & Tian Cui

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  1. Longhai Shen
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  2. Xuefei Li
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  3. Qiliang Cui
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  4. Bingbing Liu
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  5. Tian Cui
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Correspondence to Longhai Shen or Qiliang Cui.

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Shen, L., Li, X., Cui, Q. et al. Formation and growth mechanism of ripple-like AlN nanowires. Appl. Phys. A 99, 111–115 (2010). https://doi.org/10.1007/s00339-009-5541-3

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  • DOI: https://doi.org/10.1007/s00339-009-5541-3

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