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Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass substrates

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Abstract

To improve the electrical properties of as-deposited BZ1T9 ferroelectric thin films, the supercritical carbon dioxide fluid (SCF) process were used by a low temperature treatment. In this study, the BZ1T9 ferroelectric thin films were post-treated by SCF process which mixed with propyl alcohol and pure H2O. After SCF process treatment, the remnant polarization increased in hysteresis curves, and the passivation of oxygen vacancy and defect in leakage current density curves were found. Additionally, the improvement qualities of as-deposited BZ1T9 thin films after SCF process treatment were carried out XPS, C–V, and J–E measurements.

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Authors and Affiliations

  1. Department of Electronics Engineering and Computer Science, Tung-Fang Institute of Technology, Kaohsiung, Taiwan, ROC

    Kai-Huang Chen

  2. Department of Physics, National Sun-Yat-Sen University, Kaohsiung, Taiwan, ROC

    Ting-Chang Chang & Yung-En Hsu

  3. Department of Materials and Optoelectronic Science, National Sun-Yat-Sen University, Kaohsiung, Taiwan, ROC

    Guan-Chang Chang

  4. Department of Electrical Engineering, National Sun-Yat-Sen University, Kaohsiung, Taiwan, ROC

    Ying-Chung Chen

  5. Department of Electro-Optical Engineering, Southern Taiwan University, Tainan, Taiwan, ROC

    Hong-Quan Xu

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  1. Kai-Huang Chen
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  2. Ting-Chang Chang
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  3. Guan-Chang Chang
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Correspondence to Kai-Huang Chen.

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Chen, KH., Chang, TC., Chang, GC. et al. Low temperature improvement method on characteristics of Ba(Zr0.1Ti0.9)O3 thin films deposited on indium tin oxide/glass substrates. Appl. Phys. A 99, 291–295 (2010). https://doi.org/10.1007/s00339-009-5523-5

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  • DOI: https://doi.org/10.1007/s00339-009-5523-5

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