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A photosensitive copolymer for the gate insulator of organic thin-film transistors

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Abstract

A novel cross-linkable copolymer for the gate insulators of organic thin-film transistors (OTFTs) was synthesized by free radical copolymerization with methyl methacrylate and ethylene methylacrylate cinnamoylate. Copolymers of molecular weights (Mn: 109200–160000 g mol−1) and polydispersities (1.59–2.24) were characterized by FTIR and NMR. Spin-coated thin films had smooth surfaces with the root-mean-square (RMS) surface roughness of 0.23 nm, 0.41 nm, respectively, before and after UV irradiation. Exposure of the copolymers to UV light produced cross-linking of the polymeric chains that could be confirmed by comparing the FTIR and UV spectra recorded prior and after irradiation. Moreover, the vanadyl-phthalocyanine (VOPc) OTFTs with the photosensitive copolymer as gate insulator were fabricated and found to exhibit a carrier mobility of 0.25 cm2/V s, an on/off ratio of 104.

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Authors and Affiliations

  1. Key Lab of Supramolecular Structure & Materials, College of Chemistry, Jilin University, Changchun, 130012, P.R. China

    Xuehui Zhang, Lei Wang & Zhanchen Cui

  2. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun, 130012, P.R. China

    He Wang & Donghang Yan

Authors
  1. Xuehui Zhang
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  2. He Wang
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  3. Lei Wang
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  4. Zhanchen Cui
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  5. Donghang Yan
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Correspondence to Zhanchen Cui.

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Zhang, X., Wang, H., Wang, L. et al. A photosensitive copolymer for the gate insulator of organic thin-film transistors. Appl. Phys. A 99, 85–91 (2010). https://doi.org/10.1007/s00339-009-5514-6

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