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Magnetoresistance in a nominally undoped InGaN thin film

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Abstract

The magnetotransport properties of a nominally undoped InGaN thin film grown by metal-organic chemical vapor deposition were investigated. Resistivity was measured under a magnetic field up to 5 T over the temperature range of 3 to 298 K. The film exhibits a negative magnetoresistance at low temperatures. Its magnitude decreases with increasing temperature, and turns to be positive for temperatures above 100 K. The negative component was described by a model proposed by Khosla and Fischer for spin scattering of carriers in an impurity band. The positive part was attributed to the effect of Lorentz force on the carrier motion. Agreement between the model and the data is presented.

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Authors and Affiliations

  1. Key Laboratory of Semiconductor Materials Science, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People’s Republic of China

    K. Ding & Y. P. Zeng

  2. Novel Material Center, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People’s Republic of China

    K. Ding, Y. P. Zeng, Y. Y. Li & L. J. Cui

  3. Research and Development Center for Semiconductor Lighting, Chinese Academy of Sciences, P.O. Box 912, Beijing, 100083, People’s Republic of China

    Y. P. Zeng, J. X. Wang, H. X. Lu & P. P. Cong

Authors
  1. K. Ding
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  2. Y. P. Zeng
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  3. Y. Y. Li
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  4. L. J. Cui
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  5. J. X. Wang
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  6. H. X. Lu
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  7. P. P. Cong
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Correspondence to K. Ding.

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Ding, K., Zeng, Y.P., Li, Y.Y. et al. Magnetoresistance in a nominally undoped InGaN thin film. Appl. Phys. A 99, 63–66 (2010). https://doi.org/10.1007/s00339-009-5497-3

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  • DOI: https://doi.org/10.1007/s00339-009-5497-3

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