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Optical properties of one-dimensional photonic crystals fabricated by photo-electrochemical etching of silicon

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Abstract

The optical properties of one-dimensional photonic crystals (1D PCs), fabricated by electrochemical etching of periodic wall arrays on n-type (100) Si substrates, are investigated in this study. Several 1D PCs were fabricated with lattice periods varying from 4 to 7 μm and with trench depths in the range 160–210 μm. In-plane reflection spectra of the photonic structures at different depths were registered over a wide spectral range of 1.5–15 μm using Fourier Transform Infra-Red (FTIR) micro-spectroscopy. Some of the features observed in the reflection spectra of the structures investigated are believed to be as a result of interface roughness. A corrugated side-wall surface, an artifact of the fabrication technique, results in the degradation of optical reflection characteristics, principally mainly in the near IR spectral range, and the emergence of optical anisotropy. As a result of the periodicity, modulation of the reflection spectra, that is, the difference between the maxima and minima of the interference fringes, reached a value of 95% in the mid-infrared. The optical properties of the structures investigated indicate that they show promise for microphotonics applications.

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Authors and Affiliations

  1. Ioffe Physical Technical Institute, St.-Petersburg, Russia

    E. V. Astrova, V. A. Tolmachev, G. V. Fedulova & A. V. Ankudinov

  2. Department of Electronic and Electrical Engineering, Trinity College Dublin, Dublin, 2, Ireland

    V. A. Melnikov & T. S. Perova

Authors
  1. E. V. Astrova
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  2. V. A. Tolmachev
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  3. G. V. Fedulova
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  4. V. A. Melnikov
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  5. A. V. Ankudinov
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  6. T. S. Perova
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Corresponding author

Correspondence to T. S. Perova.

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Astrova, E.V., Tolmachev, V.A., Fedulova, G.V. et al. Optical properties of one-dimensional photonic crystals fabricated by photo-electrochemical etching of silicon. Appl. Phys. A 98, 571–581 (2010). https://doi.org/10.1007/s00339-009-5469-7

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  • DOI: https://doi.org/10.1007/s00339-009-5469-7

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