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Morphological characterization of porous GaP prepared by electrochemical etching

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Abstract

In this study, the formation of porous GaP obtained by a constant potential anodic process has been investigated. The pore morphology and porous layer structure strongly depend on the electrochemical conditions. For anodization with an applied potential at 24.5 V in nitric organic electrolyte at room temperature, regular superlattices can be formed on the GaP crystal surface. In comparison to anodization of GaP with other traditional electrolytes, this anodic process with the nitric acid system adulterated with organic solvent can more effectively produce varied porous morphologies.

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Authors and Affiliations

  1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701, Taiwan

    Y. C. Shen & M. H. Hon

  2. Department of Materials Science, National University of Tainan, Tainan, 700, Taiwan

    I. C. Leu

  3. Department of Mechanical Engineering, National Pingtung University of Science and Technology, Pingtung, 912, Taiwan

    L. G. Teoh

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  1. Y. C. Shen
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  2. M. H. Hon
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  4. L. G. Teoh
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Correspondence to L. G. Teoh.

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Shen, Y.C., Hon, M.H., Leu, I.C. et al. Morphological characterization of porous GaP prepared by electrochemical etching. Appl. Phys. A 98, 429–434 (2010). https://doi.org/10.1007/s00339-009-5413-x

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  • DOI: https://doi.org/10.1007/s00339-009-5413-x

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