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PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers

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Abstract

In this work, a novel high-frequency ultrasonic transducer structure is realized by using PMNPT-on-silicon technology and silicon micromachining. To prepare the single crystalline PMNPT-on-silicon wafers, a hybrid processing method involving wafer bonding, mechanical lapping and wet chemical thinning is successfully developed. In the transducer structure, the active element is fixed within the stainless steel needle housing. The measured center frequency and −6 dB bandwidth of the transducer are 35 MHz and 34%, respectively. Owing to the superior electromechanical coupling coefficient (k t ) and high piezoelectric constant (d 33) of PMNPT film, the transducer shows a good energy conversion performance with a very low insertion loss down to 8.3 dB at the center frequency.

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Authors and Affiliations

  1. Department of Applied Physics and Materials Research Center, The Hong Kong Polytechnic University, Hong Kong, China

    J. Peng, S. T. Lau, C. Chao, J. Y. Dai & H. L. W. Chan

  2. The State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 201800, China

    H. S. Luo

  3. Department of Biomedical Engineering and NIH Transducer Resource Center, University of Southern California, Los Angeles, CA, 90089-1451, USA

    B. P. Zhu, Q. F. Zhou & K. K. Shung

Authors
  1. J. Peng
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  2. S. T. Lau
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  3. C. Chao
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  4. J. Y. Dai
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  5. H. L. W. Chan
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  6. H. S. Luo
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  7. B. P. Zhu
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  8. Q. F. Zhou
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  9. K. K. Shung
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Correspondence to J. Y. Dai.

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Peng, J., Lau, S.T., Chao, C. et al. PMN-PT single crystal thick films on silicon substrate for high-frequency micromachined ultrasonic transducers. Appl. Phys. A 98, 233 (2010). https://doi.org/10.1007/s00339-009-5381-1

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  • DOI: https://doi.org/10.1007/s00339-009-5381-1

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