Skip to main content
SpringerLink
Log in

Large memory window in the vanadium doped Bi4Ti3O12 thin films

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

We report the enhancement of ferroelectric properties in vanadium-doped Bi4Ti3O12 (BIT) thin films prepared by rf magnetron sputtering method for MFM and MFIS structures. The optimal sputtering parameters of the as-deposited Bi3.9Ti2.9V0.08O12 (BTV) ferroelectric films for different depositing times were obtained. Compared to the undoped BIT, vanadium doped BIT (BTV) showed better physical and electrical characteristics. The as-deposited BTV showed a remanent polarization (2P r ) of 23 μC/cm2, higher than the value of 16 μC/cm2 for BIT, as the measured frequency was 100 kHz. For BTV thin films in the MFIS structure, the leakage current density and the memory window decreased, the change ratio of capacitance critically increased as the depositing time increased from 30 to 120 min. Regarding the measured physical properties, the micro-structure and thickness of as-deposited undoped and vanadium doped BIT thin films were obtained and compared by XRD patterns and SEM images.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. J.F. Scott, C.A. Paz de Araujo, Science 246, 1400 (1989)

    Article  ADS  Google Scholar 

  2. D.J. Taylor, R.E. Jones, P. Zurcher, P. Chu, Y.T. Lii, B. Jiang, S.J. Gillespie, Appl. Phys. Lett. 68, 2300 (1996)

    Article  ADS  Google Scholar 

  3. J.F. Scott, C.A. Paz de Araujo, Science 246, 1400 (1989)

    Article  ADS  Google Scholar 

  4. C.A. Araujo, J.D. Cuchiaro, L.D. McMillian, M.C. Scott, J.F. Scott, Nature (London) 374, 627 (1995)

    Article  ADS  Google Scholar 

  5. B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, J. Lee, W. Jo, Nature (London) 401, 682 (1999)

    Article  ADS  Google Scholar 

  6. C.F. Yang, K.H. Chen, Y.C. Chen, T.C. Chang, Appl. Phys. A 90, 329 (2008)

    Article  ADS  Google Scholar 

  7. C.F. Yang, K.H. Chen, Y.C. Chen, T.C. Chang, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 54(9), 1726 (2007)

    Article  Google Scholar 

  8. C.C. Diao, C.F. Yang, C.C. Chan, C.Y. Kung, Key Eng. Mater. 326, 192 (2007)

    Article  Google Scholar 

  9. T. Watanabe, H. Funakubo, M. Osada, Y. Noguchi, M. Miyayama, Appl. Phys. Lett. 80(1) (2002)

  10. S.S. Kim, T.K. Song, J.K. Kim, J. Kim, J. Appl. Phys. 92(4) (2002)

  11. Y. Noguchi, M. Miyayama, Appl. Phys. Lett. 78(13) (2001)

  12. B.H. Park, B.S. Kang, S.D. Bu, T.W. Noh, L. Lee, W. Joe, Nature (London) 401, 682 (1999)

    Article  ADS  Google Scholar 

  13. Y. Noguchi, I. Miwa, Y. Goshima, M. Miyayama, Jpn. J. Appl. Phys., Part 2 39, L1259 (2000)

    Article  Google Scholar 

  14. Y. Noguchi, M. Miyayama, Appl. Phys. Lett. 78, 1903 (2001)

    Article  ADS  Google Scholar 

  15. T. Friessnegg, S. Aggarwal, R. Ramesh, B. Nielsen, E.H. Poindexter, D.J. Keeble, Appl. Phys. Lett. 77, 127 (2000)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Department of Electronics Engineering and Computer Science, Tung-Fang Institute of Technology, Kaohsiung, Taiwan

    Kai-Huang Chen & Chia-Hsiung Chang

  2. Department of Electronic Engineering, Southern Taiwan University, Tainan, Taiwan

    Chien-Min Cheng

  3. Department of Chemical and Materials Engineering, National University of Kaohsiung, Kaohsiung, Taiwan

    Cheng-Fu Yang

Authors
  1. Kai-Huang Chen
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Chia-Hsiung Chang
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Chien-Min Cheng
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Cheng-Fu Yang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Kai-Huang Chen.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Chen, KH., Chang, CH., Cheng, CM. et al. Large memory window in the vanadium doped Bi4Ti3O12 thin films. Appl. Phys. A 97, 919–923 (2009). https://doi.org/10.1007/s00339-009-5361-5

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-009-5361-5

PACS

Search

Navigation