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Mounting-induced strains in red-emitting (Al)InGaP laser diodes tuned by pressure

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Abstract

The hydrostatic pressure behavior of red-emitting diode lasers packaged on Si, AlN, and diamond submounts is studied in the 0–2 GPa range by emission and photocurrent spectroscopy. Photocurrent spectroscopy allows for simultaneous measurement of the InGaP quantum well and (Al0.5Ga0.5)0.5In0.5P waveguide. A broadening of the absorption edge of the waveguide is observed for all devices and explained by the pressure-induced direct-to-indirect transition in this material. For the QW resonance, distinct differences are observed for differently packaged devices. Thus, very low pressure tuning rates are demonstrated for devices packaged on diamond and AlN submounts and explained by the presence of shear strain components. Consistently we find the device packaged on Si to be least affected by the strain caused by the pressure cycling.

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Authors and Affiliations

  1. Institute of High Pressure Physics “UNIPRESS”, Sokolowska 29/37, 01-142, Warszawa, Poland

    Bernard Piechal, Artem Bercha & Witold Trzeciakowski

  2. Max-Born-Institut für Nichtlineare Optik und Kurzzeitspektroskopie, Max-Born-Str. 2A, 12489, Berlin, Germany

    Jens W. Tomm

  3. Osram Opto Semiconductors GmbH, Leibnizstr. 4, 93055, Regensburg, Germany

    Martin Reufer & Alvaro Gomez-Iglesias

Authors
  1. Bernard Piechal
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  2. Jens W. Tomm
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  3. Artem Bercha
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  4. Witold Trzeciakowski
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  5. Martin Reufer
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  6. Alvaro Gomez-Iglesias
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Correspondence to Bernard Piechal.

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Piechal, B., Tomm, J.W., Bercha, A. et al. Mounting-induced strains in red-emitting (Al)InGaP laser diodes tuned by pressure. Appl. Phys. A 97, 179–184 (2009). https://doi.org/10.1007/s00339-009-5238-7

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  • DOI: https://doi.org/10.1007/s00339-009-5238-7

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