Abstract
Tetrahedral amorphous carbon (ta-C) films deposited using filtered cathodic vacuum arc technology have been applied to the interlayer of surface acoustic wave devices with a ZnO/Si configuration. The phase velocity in the multilayered structure was analyzed in the first instance by theoretical calculations and was then measured by means of a network analyzer. It has been shown that the ta-C interlayer between piezoelectric film and Si substrate can strikingly increase the phase velocity of the surface acoustic wave. The greater the interlayer thickness is and the higher the content of the sp3 hybridization is, the faster surface acoustic wave propagates. However, the increment of phase velocity gradually decreases with increasing interlayer thickness. It was confirmed in this paper that the measured values of the phase velocity as a function of the interlayer thickness agree with the theoretical calculations.
Similar content being viewed by others
References
H. Meier, T. Baier, G. Riha, IEEE Trans. Microwave Theory Tech. 49, 743 (2001)
T.F. Bechteler, H. Yenigün, IEEE Trans. Microwave Theory Tech. 51, 1584 (2003)
A. Springer, F. Hollerweger, R. Weigel, S. Berek, R. Thomas, W. Ruile, C.C.W. Ruppel, M. Guglielmi, IEEE Trans. Microwave Theory Tech. 47, 2312 (1999)
H. Nakahata, A. Hachigo, K. Itakura, S. Shikata, IEEE Ultrason. Symp. 349 (2000)
L.B. Milstein, P.K. Das, IEEE Commun. Mag. 17, 25 (1979)
A. Hachigo, D.C. Malocha, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 45, 660 (1998)
D.L. Dreifus, R.L. Higgins, R.B. Henard, R. Almar, L.P. Solie, IEEE Ultrason. Symp. 191 (1997)
H. Nakahata, S. Fujii, K. Higaki, A. Hachigo, H. Kitabayashi, S. Shikata, N. Fujimori, Semicond. Sci. Technol. 18, S96 (2003)
S.H. Seo, W.C. Shin, J.S. Park, Thin Solid Films 416, 190 (2002)
T. Uemura, S. Fujii, H. Kitabayshi, K. Itakura, A. Hachigo, H. Nakahata, S. Shikata, K. Ishibashi, T. Imari, IEEE Ultrason. Symp. 431 (2002)
G. Lehmann, M. Schreck, L. Hou, J. Lambers, P. Hess, Diam. Relat. Mater. 10, 686 (2001)
S. Fujii, Y. Seki, K. Yoshida, H. Nakahata, K. Higaki, H. Kitabayashi, S. Shikata, IEEE Ultrason. Symp. 183 (1997)
D. Schneider, C.F. Meyer, H. Mai, B. Schöneich, H. Ziegele, H.J. Scheibe, Y. Lifshitz, Diam. Relat. Mater. 7, 973 (1998)
J. Zhu, J. Han, X. Han, H. InakiSchlaberg, J. Wang, J. Appl. Phys. 104, 013512 (2008)
J.J. Campbell, W.R. Jones, IEEE Trans. Son. Ultrason. 15, 209 (1968)
K. Hashimoto, Surface Acoustic Wave Devices in Telecommunications Modeling and Simulation (Springer, Berlin, 2000), pp. 208–257.
H. Nakahata, A. Hachigo, K. Higaki, S. Fujii, S. Shikata, N. Fujimori, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 42, 362 (1995)
J. Zhu, C. Jiang, X. Han, J.C. Han, S. Meng, C. Hu, W. Zheng, Thin Solid Films 516, 3117 (2008)
M.G. Beghi, A.C. Ferrari, C.E. Bottani, A. Libassi, B.K. Tanner, K.B.K. Teo, J. Robertson, Diam. Relat. Mater. 11, 1062 (2002)
A.C. Ferrari, J. Robertson, M.G. Beghi, C.E. Bottani, R. Ferulano, R. Pastorelli, Appl. Phys. Lett. 75, 1893 (1999)
R. Pastorelli, A.C. Ferrari, M.G. Beghi, C.E. Bottani, J. Robertson, Diam. Relat. Mater. 9, 825 (2000)
M.C. Polo, J.L. Andújar, A. Hart, J. Robertson, W.I. Milne, Diam. Relat. Mater. 9, 663 (2000)
D. Sheeja, B.K. Tay, K.W. Leong, C.H. Lee, Diam. Relat. Mater. 11, 1643 (2002)
C.T. Yang, Z.Y. Zeng, Z. Chen, J.S. Liu, S.R. Zhang, J. Cryst. Growth 293, 299 (2006)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Zhu, J., Wang, S., Jiang, C. et al. Tetrahedral amorphous carbon films as a frequency-increasing interlayer of surface acoustic wave devices with a ZnO/Si configuration. Appl. Phys. A 97, 195–200 (2009). https://doi.org/10.1007/s00339-009-5160-z
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-009-5160-z