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Low capacitance CMOS silicon photodetectors for optical clock injection

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Abstract

We have studied the response of CMOS compatible detectors fabricated in a silicon-on-sapphire (SOS) process, operated under short pulse excitation in the blue. These high speed, low capacitance detectors would be suitable for very precise, surface-normal clock injection with silicon CMOS. We characterize the capacitance of the detector structure through a combination of experimental techniques and circuit-level and electromagnetic simulations. The transit-time-limited response of the detectors is validated through pump–probe experiments. Detector response times of ∼35 ps have been measured, and devices have capacitance as low as ∼4 fF.

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Authors and Affiliations

  1. Department of Electrical Engineering, Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA

    S. Latif, S. E. Kocabas & D. A. B. Miller

  2. Department of Applied Physics, Ginzton Laboratory, Stanford University, Stanford, CA, 94305, USA

    L. Tang

  3. Department of Applied Physics and Photonics, Vrije Universitiet Brussel, Brussels, 1050, Belgium

    C. Debaes

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  1. S. Latif
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  2. S. E. Kocabas
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  3. L. Tang
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  4. C. Debaes
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  5. D. A. B. Miller
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Correspondence to S. Latif.

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Latif, S., Kocabas, S.E., Tang, L. et al. Low capacitance CMOS silicon photodetectors for optical clock injection. Appl. Phys. A 95, 1129–1135 (2009). https://doi.org/10.1007/s00339-009-5122-5

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  • DOI: https://doi.org/10.1007/s00339-009-5122-5

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