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Silicon–germanium nanostructures for on-chip optical interconnects

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Abstract

Silicon–germanium epitaxially grown on silicon in the form of two-dimensional (quantum wells) and three-dimensional (quantum dots) nanostructures exhibits photoluminescence and electroluminescence in the technologically important spectral range of 1.3–1.6 μm. Until recently, the major roadblocks for practical applications of these devices were strong thermal quenching of the luminescence quantum efficiency, and a long carrier radiative lifetime. This paper summarizes recent progress in the understanding of carrier recombination in Si/SiGe nanostructures and presents a potential new route toward CMOS compatible light emitters for on-chip optical interconnects.

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References

  1. N. Savage, IEEE Spectrum 39(8), 32 (2002)

    Article  Google Scholar 

  2. B. Mukherjee, IEEE J. Sel. Areas Commun. 18, 1810 (2000)

    Article  Google Scholar 

  3. D.V. Plant, A.G. Kirk, Proc. IEEE 88, 806 (2000)

    Article  Google Scholar 

  4. D.A.B. Miller, Proc. IEEE 88, 728 (2000)

    Article  Google Scholar 

  5. D.A.B. Miller, L. Edward, IEEE J. Sel. Top. Quantum Electron. 6, 1312 (2000)

    Article  Google Scholar 

  6. H. Wada, T. Kamijoh, IEEE Photonics Technol. Lett. 8, 173 (1996)

    Article  ADS  Google Scholar 

  7. M. Razeghi, M. Defour, R. Blondeau, F. Omnes, P. Maurel, O. Acher, F. Brillouet, J.C. C-Fan, J. Salerno, Appl. Phys. Lett. 53, 2389 (1988)

    Article  ADS  Google Scholar 

  8. H. Park, A. Fang, S. Kodama, J. Bowers, Opt. Express 13, 9460 (2005)

    Article  ADS  Google Scholar 

  9. A.W. Fang, H. Park, O. Cohen, R. Jones, M.J. Paniccia, J.E. Bowers, Opt. Express 14, 9203 (2006)

    Article  ADS  Google Scholar 

  10. L. Pavesi, D.J. Lockwood, Silicon Photonics (Springer, Berlin, 2004), p. 397

    Google Scholar 

  11. Y. Kanemitsu, Phys. Rep. 263, 1 (1995)

    Article  ADS  Google Scholar 

  12. K.D. Hirschman, L. Tsybeskov, S.P. Duttagupta, P.M. Fauchet, Nature 384, 338 (1996)

    Article  ADS  Google Scholar 

  13. A.G. Cullis, L.T. Canham, P.D.J. Calcott, J. Appl. Phys. 82, 909 (1997)

    Article  ADS  Google Scholar 

  14. Z.H. Lu, D.J. Lockwood, J.-M. Baribeau, Nature 378, 258 (1995)

    Article  ADS  Google Scholar 

  15. L. Tsybeskov, D.J. Lockwood, in Semiconductor Nanocrystals: From Basic Principles to Applications, ed. by A.L. Efros, D.J. Lockwood, L. Tsybeskov (Kluwer Academics/Plenum, New York, 2003), pp. 209–229

    Google Scholar 

  16. G.F. Grom, D.J. Lockwood, J.P. McCaffrey, H.J. Labbe, P.M. Fauchet, B. White, J. Diener, D. Kovalev, F. Koch, L. Tsybeskov, Nature 407, 358 (2000)

    Article  ADS  Google Scholar 

  17. L. Tsybeskov, K.D. Hirschman, S.P. Duttagupta, M. Zacharias, P.M. Fauchet, J.P. McCaffrey, D.J. Lockwood, Appl. Phys. Lett. 72, 43 (1998)

    Article  ADS  Google Scholar 

  18. L. Pavesi, L. Dal Negro, C. Mazzoleni, G. Franzo, F. Priolo, Nature 408, 440 (2000)

    Article  ADS  Google Scholar 

  19. S. Schuppler, S.L. Friedman, M.A. Marcus, D.L. Adler, Y.-H. Xie, F.M. Ross, Y.J. Chabal, T.D. Harris, L.E. Brus, W.L. Brown, E.E. Chaban, P.F. Szajowski, S.B. Christman, P.H. Citrin, Phys. Rev. B 52, 4910 (1995)

    Article  ADS  Google Scholar 

  20. S. Coffa, G. Franzò, F. Priolo, Appl. Phys. Lett. 69, 2077 (1996)

    Article  ADS  Google Scholar 

  21. S. Fukatsu, N. Usami, Y. Shiraki, A. Nishida, K. Nakagawa, Appl. Phys. Lett. 63, 967 (1993)

    Article  ADS  Google Scholar 

  22. L. Vescan, T. Stoica, J. Lumin. 80, 485 (1998)

    Article  Google Scholar 

  23. D. Leong, M. Harry, K.J. Reeson, K.P. Homewood, Nature 387, 686 (1997)

    Article  ADS  Google Scholar 

  24. N. Fraj, I. Saïdi, S. Ben Radhia, K. Boujdaria, J. Appl. Phys. 102, 053703 (2007)

    Article  ADS  Google Scholar 

  25. J. Weber, M.I. Alonso, Phys. Rev. B 40, 8 (1989)

    Google Scholar 

  26. T.D. Steiner, R.L. Hengehold, Y.K. Yeo, D.J. Godbey, P.E. Thompson, G.S. Pomrenke, J. Vac. Sci. Technol. B 10, 924 (1992)

    Article  Google Scholar 

  27. H. Presting, M. Jaros, G. Abstreiter, Proc. SPIE 1512, 250 (1991)

    Article  ADS  Google Scholar 

  28. J.C. Strum, H. Manoharan, L.C. Lenchyshyn, M.L.W. Thealt, N.L. Rowell, J.-P. Noel, D.C. Houghton, Phys. Rev. Lett. 66, 1362 (1991)

    Article  ADS  Google Scholar 

  29. F.K. LeGoues, B.S. Meyerson, J.F. Morar, Phys. Rev. Lett. 66, 2903 (1991)

    Article  ADS  Google Scholar 

  30. P. Zaumseil, G.G. Fischer, K. Brunner, K. Eberl, J. Appl. Phys. 81, 6134 (1997)

    Article  ADS  Google Scholar 

  31. D.J. Eaglesham, M. Cerullo, Phys. Rev. Lett. 64, 1943 (1990)

    Article  ADS  Google Scholar 

  32. Y.-W. Mo, D.E. Savage, B.S. Swartzentruber, M.G. Lagally, Phys. Rev. Lett. 65, 1020 (1990)

    Article  ADS  Google Scholar 

  33. D.E. Savage, F. Liu, V. Zielasek, M.G. Lagaly, in Germanium Silicon: Growth and Materials, ed. by R. Hull, J.C. Bean. Semiconductor and Semimetals, vol. 56 (Academic, New York, 1999), pp. 49–96

    Google Scholar 

  34. B. Voigtländer, A. Zinner, Appl. Phys. Lett. 63, 3055 (1993)

    Article  ADS  Google Scholar 

  35. J.A. Floro, E. Chason, L.B. Freund, R.D. Twesten, R.Q. Hwang, G.A. Lucadamo, Phys. Rev. B 59, 1990 (1999)

    Article  ADS  Google Scholar 

  36. D.E. Jesson, S.J. Pennycook, J.Z. Tischler, J.D. Budai, J.-M. Baribeau, D.C. Houghton, Phys. Rev. Lett. 70, 2293 (1993)

    Article  ADS  Google Scholar 

  37. Y. Shiraki, A. Sakai, Surf. Sci. Rep. 59, 153 (2005)

    Article  ADS  Google Scholar 

  38. T.I. Kamins, E.C. Carr, R.S. Williams, S.J. Rosner, J. Appl. Phys. 81, 211 (1997)

    Article  ADS  Google Scholar 

  39. P. Schittenhelm, M. Gail, J. Brunner, J.F. Nützel, G. Abstreiter, Appl. Phys. Lett. 67, 1292 (1995)

    Article  ADS  Google Scholar 

  40. R. Apetz, L. Vescan, A. Hartmann, C. Dieker, H. Lüth, Appl. Phys. Lett. 66, 445 (1995)

    Article  ADS  Google Scholar 

  41. O.G. Schmidt, C. Lange, K. Eberl, Appl. Phys. Lett. 75, 1905 (1999)

    Article  ADS  Google Scholar 

  42. B.V. Kamenev, L. Tsybeskov, J.-M. Baribeau, D.J. Lockwood, Appl. Phys. Lett. 84, 1293 (2004)

    Article  ADS  Google Scholar 

  43. C.G. Van de Walle, R.M. Martin, Phys. Rev. B 34, 5621 (1986)

    Article  ADS  Google Scholar 

  44. P. Schittenhelm, C. Engel, F. Findeis, G. Abstreiter, A.A. Darhuber, G. Bauer, A.O. Kosogov, P. Werner, J. Vac. Sci. Technol. B 16, 1575 (1998)

    Article  Google Scholar 

  45. M. El Kurdi, S. Sauvage, G. Fishman, P. Boucaud, Phys. Rev. B 73, 195327 (2006)

    Article  ADS  Google Scholar 

  46. B.V. Kamenev, L. Tsybeskov, J.-M. Baribeau, D.J. Lockwood, Phys. Rev. B 72, 193306 (2005)

    Article  ADS  Google Scholar 

  47. J.-M. Baribeau, N.L. Rowell, D.J. Lockwood, J. Mat. Res. 20, 3278 (2005)

    Article  ADS  Google Scholar 

  48. J.-M. Baribeau, X. Wu, D.J. Lockwood, J. Vac. Sci. Technol. A 24, 663 (2006)

    Article  Google Scholar 

  49. J.-M. Baribeau, X. Wu, M.-J. Picard, D.J. Lockwood, in Group IV Semiconductor Nanostructures—2006, ed. by L. Tsybeskov, D.J. Lockwood, C. Delerue, M. Ichikawa, A.W. van Buuren (MRS, Pittsburgh, 2007), p. 119

    Google Scholar 

  50. D.J. Lockwood, X. Wu, J.-M. Baribeau, IEEE Trans. Nanotechnol. 6, 245 (2007)

    Article  ADS  Google Scholar 

  51. B.V. Kamenev, H. Grebel, L. Tsybeskov, T.I. Kamins, R.S. Williams, J.-M. Baribeau, D.J. Lockwood, Appl. Phys. Lett. 83, 5035 (2003)

    Article  ADS  Google Scholar 

  52. M.I. Alonso, K. Winer, Phys. Rev. B 39, 10056 (1989)

    Article  ADS  Google Scholar 

  53. F. Cerdeira, C.J. Buchenauer, F.H. Pollak, M. Cardona, Phys. Rev. B 5, 580 (1972)

    Article  ADS  Google Scholar 

  54. S.C. Jain, B. Dietrich, H. Richter, A. Atkinson, A.H. Harker, Phys. Rev. B 52, 6247 (1995)

    Article  ADS  Google Scholar 

  55. J.E. Smith Jr., M.H. Brodsky, B.L. Crowder, M.I. Nathan, A. Pinczuk, Phys. Rev. Lett. 26, 642 (1971)

    Article  ADS  Google Scholar 

  56. L.P. Tilly, P.M. Mooney, J.O. Chu, F.K. LeGoues, Appl. Phys. Lett. 67, 2488 (1995)

    Article  ADS  Google Scholar 

  57. S. Bozzo, J.-L. Lazzari, G. Bremond, J. Derrien, Thin Solid Films 380, 130 (2000)

    Article  ADS  Google Scholar 

  58. O.G. Schmidt, K. Eberl, Phys. Rev. B 61, 13721 (2000)

    Article  ADS  Google Scholar 

  59. K. Brunner, Rep. Prog. Phys. 6, 27 (2002)

    Article  ADS  Google Scholar 

  60. L.C. Lenchyshyn, M.L.W. Thewalt, J.C. Sturm, P.V. Schwartz, E.J. Prinz, N.L. Rowell, J.-P. Noël, D.C. Houghton, Appl. Phys. Lett. 60, 3174 (1992)

    Article  ADS  Google Scholar 

  61. T. Baier, U. Mantz, K. Thonke, R. Sauer, F. Schäffler, H.-J. Herzog, Phys. Rev. B 50, 15191 (1994)

    Article  ADS  Google Scholar 

  62. J. Hu, X.G. Xu, J.A.H. Stotz, S.P. Watkins, A.E. Curzon, M.L.W. Thewalt, N. Matine, C.R. Bolognesi, Appl. Phys. Lett. 73, 2799 (1998)

    Article  ADS  Google Scholar 

  63. J. Wan, G.L. Jin, Z.M. Jiang, Y.H. Luo, J.L. Liu, K.L. Wang, Appl. Phys. Lett. 78, 1763 (2001)

    Article  ADS  Google Scholar 

  64. P.A. Cain, H. Ahmed, D.A. Williams, J.M. Bonar, Appl. Phys. Lett. 77, 3415 (2000)

    Article  ADS  Google Scholar 

  65. B.V. Kamenev, E.-K. Lee, H.-Y. Chang, H. Han, H. Grebel, L. Tsybeskov, T.I. Kamins, Appl. Phys. Lett. 89, 153106 (2006)

    Article  ADS  Google Scholar 

  66. E.-K. Lee, L. Tsybeskov, T.I. Kamins, Appl. Phys. Lett. 92, 033110 (2008)

    Article  ADS  Google Scholar 

  67. H. Qin, A.W. Holleitner, K. Eber, R.H. Blick, Phys. Rev. B 64, 241302 (2001)

    Article  ADS  Google Scholar 

  68. C.J. Williams, E. Corbin, M. Jaros, D.C. Herbert, Physica B 254, 240 (1998)

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, NJ, 07102, USA

    L. Tsybeskov, E.-K. Lee & H.-Y. Chang

  2. Institute for Microstructural Sciences, National Research Council, Ottawa, K1A 0R6, Canada

    D. J. Lockwood, J.-M. Baribeau & X. Wu

  3. Information and Quantum Systems Laboratory, Hewlett-Packard Laboratories, Palo Alto, CA, 94304, USA

    T. I. Kamins

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  1. L. Tsybeskov
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  2. E.-K. Lee
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Correspondence to L. Tsybeskov.

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Tsybeskov, L., Lee, EK., Chang, HY. et al. Silicon–germanium nanostructures for on-chip optical interconnects. Appl. Phys. A 95, 1015–1027 (2009). https://doi.org/10.1007/s00339-009-5111-8

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