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Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications

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Abstract

This paper focuses on the deposition and electromechanical characterization of lanthanum-doped lead hafnate titanate (PLHT) thin films as key material in piezoelectric microelectromechanical systems (pMEMS). PLHT (x/30/70) and PLHT(x/45/55) films with a thickness between 150 nm and 250 nm were deposited by chemical solution deposition (CSD). Thereby x varies between 0 and 10% La content. The electrical characterization shows that undoped (x=0) PLHT exhibit ferroelectric behavior similar to PZT of the same composition. La doping results in reduced ferroelectric properties and also affects the electromechanical properties. Measurements using a double beam laser interferometer yield a piezoelectric coefficient d 33 of 60 pm/V, which stays constant with an increasing electric field. This leads to a linear displacement compared to undoped PLHT or conventional PZT films used for MEMS applications.

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Authors and Affiliations

  1. IFF, Research Centre Jülich, 52425, Jülich, Germany

    C. Kügeler

  2. IWE II, RWTH-Aachen, Sommerfeldstr. 24, 52074, Aachen, Germany

    U. Böttger & T. Schneller

Authors
  1. C. Kügeler
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  2. U. Böttger
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  3. T. Schneller
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Correspondence to C. Kügeler.

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Kügeler, C., Böttger, U. & Schneller, T. Electromechanical properties of lanthanum-doped lead hafnate titanate thin films for integrated piezoelectric MEMS applications. Appl. Phys. A 94, 739–745 (2009). https://doi.org/10.1007/s00339-008-5045-6

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  • DOI: https://doi.org/10.1007/s00339-008-5045-6

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