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Energy level alignment at interfaces between organic semiconductors and clean ferromagnetic La0.7Sr0.3MnO3 thin film contacts for spin injection

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Abstract

We have studied the energy level alignment at interfaces between clean ferromagnetic La0.7Sr0.3MnO3 and two archetype organic semiconductors, α-sexithiophene and copper-phthalocyanine, by combined X-ray and ultraviolet photoelectron spectroscopy. We observe the formation of a large interface dipole at both studied interfaces and small hole injection barriers. In addition, our results indicate a small chemical interaction between the organic materials and the La0.7Sr0.3MnO3 surface which leads to a pinning of the Fermi level and the relatively small hole injection barriers.

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Authors and Affiliations

  1. IFW Dresden, 01069, Dresden, Germany

    Mandy Grobosch, Kathrin Dörr, Ramesh B. Gangineni & Martin Knupfer

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  1. Mandy Grobosch
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  2. Kathrin Dörr
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  3. Ramesh B. Gangineni
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  4. Martin Knupfer
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Correspondence to Martin Knupfer.

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Grobosch, M., Dörr, K., Gangineni, R.B. et al. Energy level alignment at interfaces between organic semiconductors and clean ferromagnetic La0.7Sr0.3MnO3 thin film contacts for spin injection. Appl. Phys. A 95, 95–99 (2009). https://doi.org/10.1007/s00339-008-5001-5

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