Abstract
For the design and manufacture of complex integrated circuits, control over the threshold voltage of the transistors is essential. In the present contribution, we present a non-invasive method to tune the threshold voltage of organic thin-film transistors after device assembly over a wide range without any significant degradation of the device characteristics. This is realized by incorporating a thin, chemically reactive siloxane layer bonded to the gate oxide. This results in threshold voltages of around 70 V in the as-prepared devices. By exposing a transistor modified in this way to ammonia at different concentrations, the threshold voltage can be tuned in steps of only a few volts. This treatment affects only the charge density at the semiconductor–dielectric interface, leaving the overall shape of the transistor characteristics and the charge-carrier mobility largely unaltered.
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C. Dimitrakopoulus, D. Mascaro, IBM J. Res. Dev. 45, 1 (2001)
F. Assaderaghi, D. Sinitsky, S. Parke, J. Bokor, P. Ko, C. Hu, in IEEE International Electron Devices Meeting (IDEM), 1994, pp. 809–812
H. Kotaki, S. Kakimoto, M. Nakano, T. Matsuoka, K. Adachi, K. Sugimoto, T. Fukushima, Y. Sato, in IEEE International Electron Devices Meeting (IDEM), 1996, pp. 459–462
M. Miyazaki, G. Ono, T. Kawahara, in Circuits and Systems (ISCAS 2005), vol. 1, pp. 17–20
J. Kedzierski, D. Boyd, P. Ronsheim, S. Zafar, J. Newbury, J. Ott, C. Cabral, M. Ieong, W. Haensch, in Electron Devices Meet., 2003 (IEEE International, New York, 2003), pp. 13.3.1–13.3.4
S. Iba, T. Sekitani, Y. Kato, T. Someya, Appl. Phys. Lett. 87, 023509 (2005)
M. Scharnberg, V. Zaporojtchenko, R. Adelung, F. Faupel, Appl. Phys. Lett. 90, 013501 (2007)
G. Maltezos, R. Nortrup, Appl. Phys. Lett. 83, 102067 (2003)
A. Wang, I. Kymissis, V. Bulović, A. Akinwande, IEEE Trans. Electron Devices 53, 1 (2006)
A. Wang, I. Kymissis, V. Bulović, A. Akinwande, Appl. Phys. Lett. 89, 112109 (2006)
Y. Guo, Y. Liu, C. Di, G. Yu, W. Wu, S. Ye, Y. Wang, X. Xu, Y. Sun, Appl. Phys. Lett. 91, 263502 (2007)
K.P. Pernstich, S. Haas, D. Oberhoff, C. Goldmann, D.J. Gundlach, B. Batlogg, A.N. Rashid, G.J. Schitter, J. Appl. Phys. 96, 6431 (2004)
S. Kobayashi, T. Nishikawa, T. Takenobu, S. Mori, T. Shimoda, T. Mitani, H. Shimotani, N. Yoshimoto, S. Oagawa, Y. Iwasa, Nature Mater. 3, 317 (2004)
P. Pacher, A. Lex, V. Proschek, H. Etschmaier, E. Tchernychova, M. Sezen, U. Scherf, W. Grogger, G. Trimmel, C. Slugovc, E. Zojer, Adv. Mater. 20, 3143 (2008)
C. Goldmann, C. Krellner, K.P. Pernstich, S. Haas, D.J. Gundlach, B. Batlogg, J. Appl. Phys. 99, 034507 (2006)
C. Tanase, E.J. Meijer, P.W.M. Blom, D.M. de Leeuw, Org. Electron. 4, 33 (2003)
M. Mottaghi, G. Horowitz, Org. Electron. 7, 528 (2006)
P. Pacher, A. Lex, V. Proschek, O. Werzer, P. Frank, S. Temmel, W. Kern, R. Resel, A. Winkler, C. Slugovc, R. Schennach, G. Trimmel, E. Zojer, J. Phys. Chem. C 111(33), 12407 (2007)
S. Scheinert, K.P. Pernstich, B. Batlogg, G. Paasch, J. Appl. Phys. 102, 104503 (2007)
S. Possaner, K. Zojer, P. Pacher, E. Zojer, F. Schürrer, Adv. Funct. Mater. (2008). doi:10.1002/adfm.200801466
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Etschmaier, H., Pacher, P., Lex, A. et al. Continuous tuning of the threshold voltage of organic thin-film transistors by a chemically reactive interfacial layer. Appl. Phys. A 95, 43–48 (2009). https://doi.org/10.1007/s00339-008-4995-z
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DOI: https://doi.org/10.1007/s00339-008-4995-z