Abstract
Nanocrystalline ZnO thin films have been deposited on rhenium and tungsten pointed and flat substrates by pulsed laser deposition method. An emission current of 1 nA with an onset voltage of 120 V was observed repeatedly and maximum current density ∼1.3 A/cm2 and 9.3 mA/cm2 has been drawn from ZnO/Re and ZnO/W pointed emitters at an applied voltage of 12.8 and 14 kV, respectively. In case of planar emitters (ZnO deposited on flat substrates), the onset field required to draw 1 nA emission current is observed to be 0.87 and 1.2 V/μm for ZnO/Re and ZnO/W planar emitters, respectively. The Fowler–Nordheim plots of both the emitters show nonlinear behaviour, typical for a semiconducting field emitter. The field enhancement factor β is estimated to be ∼2.15×105 cm−1 and 2.16×105 cm−1 for pointed and 3.2×104 and 1.74×104 for planar ZnO/Re and ZnO/W emitters, respectively. The high value of β factor suggests that the emission is from the nanometric features of the emitter surface. The emission current–time plots exhibit good stability of emission current over a period of more than three hours. The post field emission surface morphology studies show no significant deterioration of the emitter surface indicating that the ZnO thin film has a very strong adherence to both the substrates and exhibits a remarkable structural stability against high-field-induced mechanical stresses and ion bombardment. The results reveal that PLD offers unprecedented advantages in fabricating the ZnO field emitters for practical applications in field-emission-based electron sources.
Similar content being viewed by others
References
C.J. Lee, T.J. Lee, S.C. Lyu, Y. Zhang, Appl. Phys. Lett. 81, 3648 (2002)
W. Wang, B. Zeng, J. Yang, B. Poudel, J. Huang, M.J. Naughton, Z. Ren, Adv. Mater. 18, 3275 (2006)
N.S. Ramgir, D.J. Late, A.B. Bhise, M.A. More, I.S. Mulla, K. Vijaymohanan, D.S. Joag, Nanotechnol. 17, 2730 (2006)
N.S. Ramgir, I.S. Mulla, K. Vijaymohanan, D.J. Late, A.B. Bhise, M.A. More, D.S. Joag, Appl. Phys. Lett. 88, 42107 (2006)
A.A. Al-Tabbakh, M.A. More, D.S. Joag, N.S. Ramgir, I.S. Mulla, K. Vijayamohanan, Appl. Phys. Lett. 90, 162102 (2007)
P. Misra, L.M. Kukreja, Thin Solid Films 485, 42 (2005)
Q. Zhao, H.Z. Zhang, Y.W. Zhu, S.Q. Feng, X.C. Sun, J. Xu, D.P. Yu, Appl. Phys. Lett. 86, 203115 (2005)
J.L. Zhao, X.M. Li, J.M. Bian, W.D. Yu, X.D. Gao, J. Cryst. Growth 276, 507 (2005)
F.K. Shan, G.X. Liu, W.J. Lee, G.H. Lee, I.S. Kim, B.C. Shin, Y.C. Kim, J. Cryst. Growth 277, 284 (2005)
S. Christoulakis, M. Suchea, E. Koudoumas, M. Katharakis, N. Katsarakis, G. Kiriakidis, Appl. Surf. Sci. 252, 5351 (2006)
K. Ramamoorthy, C. Sanjeeviraja, M. Jayachandran, K. Sankaranarayanan, P. Misra, L.M. Kukreja, Curr. Appl. Phys. 6, 103 (2006)
D.B. Chrisey, G.K. Hubler (eds.), Pulsed Laser Deposition of Thin Films (Wiley, New York, 1994), p. 417
D.J. Late, M.A. More, D.S. Joag, P. Misra, B.N. Singh, L.M. Kukreja, Ultramicroscopy 107, 825 (2007)
Powder Diffraction File, International Centre for Diffraction Data, Swarthmore, PA, JCPDS File No. 5-664, 4-806 and 5-702
R.H. Fowler, L.W. Nordheim, Proc. R. Soc. Lond. Ser. A 119, 173 (1928)
A.B. Bhise, D.J. Late, M.A. More, D.S. Joag, N.S. Ramgir, I.S. Mulla, K. Vijayamohanan, Appl. Surf. Sci. 253, 9159 (2007)
S.H. Jo, D. Banerjee, Z.F. Ren, Appl. Phys. Lett. 85, 1407 (2004)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Late, D.J., Misra, P., Singh, B.N. et al. Enhanced field emission from pulsed laser deposited nanocrystalline ZnO thin films on Re and W. Appl. Phys. A 95, 613–620 (2009). https://doi.org/10.1007/s00339-008-4965-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s00339-008-4965-5