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Applied Physics A

, Volume 94, Issue 1, pp 105–109 | Cite as

Electrical properties of boron-doped diamond-like carbon thin films deposited by femtosecond pulsed laser ablation

  • A. SikoraEmail author
  • A. Berkesse
  • O. Bourgeois
  • J.-L. Garden
  • C. Guerret-Piécourt
  • A.-S. Loir
  • F. Garrelie
  • C. Donnet
Article

Abstract

We report on electrical measurements and structural characterization performed on boron-doped diamond-like carbon thin films deposited by femtosecond pulsed laser deposition. The resistance has been measured between 77 and 300 K using four probe technique on platinum contacts for different boron doping. Different behaviours of the resistance versus temperature have been evidenced between pure DLC and boron-doped DLC. The a-C:B thin film resistances exhibit Mott variable range hopping signature with temperature. Potential applications of DLC thin films to highly sensitive resistive thermometry is going to be discussed.

PACS

68.55.-a 73.61.-r 81.05.Uw 81.15.Fg 

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Copyright information

© Springer-Verlag 2008

Authors and Affiliations

  • A. Sikora
    • 1
    Email author
  • A. Berkesse
    • 2
  • O. Bourgeois
    • 2
  • J.-L. Garden
    • 2
  • C. Guerret-Piécourt
    • 3
  • A.-S. Loir
    • 1
  • F. Garrelie
    • 1
  • C. Donnet
    • 1
  1. 1.Laboratoire Hubert Curien, UMR CNRS 5516Université Jean MonnetSaint EtienneFrance
  2. 2.Institut Néel, CNRS-UJF, UPR CNRS 2940Grenoble Cedex 9France
  3. 3.Ecole Centrale de Lyon, UMR CNRS 5513EcullyFrance

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