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Local electronic structure of phosphorus-doped ZnO films investigated by X-ray absorption near-edge spectroscopy

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Abstract

Using X-ray absorption near-edge structure spectroscopy (XANES), we investigate the local electronic structure of phosphorus (P) and its chemical valence in laser-ablated n-type (as-grown), and p-type (annealed) P-doped ZnO thin films. Both the P L 1- and P L 2,3-edge XANES spectra reveal that the valence state of P is 3− (P3−) in the p-type as well as in the n-type P-doped ZnO. However, the peak intensity is stronger in the former than that in the latter, suggesting that P replaces O (O2− sites with the P3−) after rapid thermal annealing. The Zn and O K-edges XANES spectra consistently demonstrate that, in the p-type state, P ions substitutionally occupy O sites in the ZnO lattice.

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Authors and Affiliations

  1. School of Materials Science and Engineering, Inha University, Incheon, 402-751, Korea

    V. Vaithianathan, Jae Young Park & Sang Sub Kim

  2. Inter University Accelerator Centre, Aruna Asaf Ali Marg, New Delhi, 110067, India

    K. Asokan

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  1. V. Vaithianathan
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  2. K. Asokan
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  4. Sang Sub Kim
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Correspondence to Sang Sub Kim.

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Vaithianathan, V., Asokan, K., Park, J.Y. et al. Local electronic structure of phosphorus-doped ZnO films investigated by X-ray absorption near-edge spectroscopy. Appl. Phys. A 94, 995–998 (2009). https://doi.org/10.1007/s00339-008-4883-6

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  • DOI: https://doi.org/10.1007/s00339-008-4883-6

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