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Rapid-thermal-anneal-based internal gettering for germanium-doped Czochralski silicon

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Abstract

The internal gettering (IG) effects involved with a rapid thermal anneal (RTA) in germanium-doped Czochralski silicon (GCz-Si) wafer have been investigated. It was found that germanium doping could enhance the oxygen precipitation in bulk while shrinking the denuded zone width near the surface through pre-RTA at high temperature plus low–high temperature conventional furnace anneals. Rapid cooling rate after RTA was clarified to be beneficial for oxygen precipitation for GCz-Si wafer. It was suggested that the germanium doping could increase the vacancy concentration in Cz-Si during RTA by forming the germanium–vacancy complexes. In contrast to that in Cz-Si wafer, the smaller-sized higher-density oxygen precipitates were presented in the nucleation anneals, then followed RTA pretreatment while more oxygen precipitates survived during ramping processes after nucleation anneals in the GCz-Si wafer. Enhanced heterogeneous nucleation and reduced critical radius of precipitates associated with the germanium–vacancy complexes have been proposed for the oxygen precipitation enhancement.

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References

  1. K. Honda, A. Ohsawa, N. Toyokura, Appl. Phys. Lett. 46, 582 (1985)

    Article  ADS  Google Scholar 

  2. T. Y Tan, E.E. Gardner, W.K. Tice, Appl. Phys. Lett. 30, 175 (1977)

    Article  ADS  Google Scholar 

  3. K. Sueoko, M. Akatsuka, M. Yonemura, T. Ono, E. Asayama, Y. Koike, S. Sasamistu, Solid State Phenom. 82–84, 49 (2002)

    Article  Google Scholar 

  4. M.L. Polignano, G.F. Cerofolini, H. Bender, C. Claeys, J. Appl. Phys. 64, 869 (1988)

    Article  ADS  Google Scholar 

  5. M. Aoki, T. Itakura, N. Sasaki, Appl. Phys. Lett. 66, 2709 (1995)

    Article  ADS  Google Scholar 

  6. J.L. Benton, P.A. Stolk, D.J. Eaglesham, D.C. Jacobson, J.Y. Cheng, J.M. Poate, N.T. Ha, T.E. Haynes, S.M. Myers, J. Appl. Phys. 80, 3275 (1996)

    Article  ADS  Google Scholar 

  7. Q. Sun, K.H. Yao, H.C. Gatos, J. Lagowski, J. Appl. Phys. 71, 3760 (1992)

    Article  ADS  Google Scholar 

  8. X. Yu, D. Yang, X. Ma, J. Yang, D. Que, J. Appl. Phys. 92, 194 (2002)

    ADS  Google Scholar 

  9. X. Yu, D. Yang, X. Ma, H. Li, Y. Shen, D. Tian, L. Li, D. Que, J. Cryst. Growth 250, 359 (2003)

    Article  ADS  Google Scholar 

  10. H. Li, D. Yang, X. Ma, X. Yu, D. Que, J. Appl. Phys. 96, 4161 (2004)

    Article  ADS  Google Scholar 

  11. J. Chen, D. Yang, H. Li, X. Ma, D. Que, J. Appl. Phys. 99, 073509 (2006)

    Article  ADS  Google Scholar 

  12. R. Flaster, D. Gambaro, M. Olmo, M. Cornara, H. Korb, Mater. Res. Soc. Symp. Proc. 510, 27 (1998)

    Google Scholar 

  13. X. Ma, L. Fu, D. Tian, D. Yang, J. Appl. Phys. 98, 084502 (2005)

    Article  ADS  Google Scholar 

  14. J. Chen, D. Yang, X. Ma, H. Li, D. Que, J. Appl. Phys. 101, 033526 (2007)

    Article  ADS  Google Scholar 

  15. D. Yang, X. Yu, X. Ma, J. Xu, L. Li, D. Que, J. Cryst. Growth 243, 371 (2002)

    Article  ADS  Google Scholar 

  16. V.V. Voronkov, R. Falster, J. Cryst. Growth 194, 76 (1998)

    Article  ADS  Google Scholar 

  17. M. Pagani, R.J. Falster, G.R. Fisher, G.C. Ferrero, M. Olmo, Appl. Phys. Lett. 70, 1572 (1997)

    Article  ADS  Google Scholar 

  18. A. Borghesi, B. Pivac, A. Sassella, A. Stella, J. Appl. Phys. 77, 4169 (1995)

    Article  ADS  Google Scholar 

  19. R. Falster, V.V. Voronkov, F. Quast, Phys. Status Solidi B 222, 219 (2000)

    Article  ADS  Google Scholar 

  20. R. Flaster, V.V. Voronkov, Mater. Sci. Eng. B 73, 87 (2000)

    Article  Google Scholar 

  21. S. McHugo, E. Weber, M. Mizuno, F. Kirscht, Appl. Phys. Lett. 66, 2840 (1995)

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, People’s Republic of China

    Jiahe Chen, Deren Yang, Xiangyang Ma & Duanlin Que

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  1. Jiahe Chen
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  2. Deren Yang
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  3. Xiangyang Ma
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  4. Duanlin Que
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Correspondence to Deren Yang.

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Chen, J., Yang, D., Ma, X. et al. Rapid-thermal-anneal-based internal gettering for germanium-doped Czochralski silicon. Appl. Phys. A 94, 905–910 (2009). https://doi.org/10.1007/s00339-008-4847-x

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  • DOI: https://doi.org/10.1007/s00339-008-4847-x

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