Abstract
The crystallization of amorphous Ge films has been studied as a function of annealing temperature between 400 and 700°C by in situ transmission electron microscopy (TEM). It is found that crystallization does not occur until the annealing temperature reaches 650°C, which is nearly 250°C higher than the crystallization temperature in previous reports. The high crystallization temperature and average crystal size obtained by in situ TEM are in agreement with those from Raman spectroscopy and X-ray diffraction measurement. The kinetics analysis indicates that homogeneous nucleation is the dominant crystallization mode and the activation energy is up to about 3.1 eV.
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Cao, Z.H., Liu, P., Meng, X.K. et al. In situ transmission electron microscopy observations of the crystallization of amorphous Ge films. Appl. Phys. A 94, 393–398 (2009). https://doi.org/10.1007/s00339-008-4818-2
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DOI: https://doi.org/10.1007/s00339-008-4818-2