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Transition of crystalline orientation of yttria-stabilized zirconia films grown by pulsed laser deposition

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Abstract

We have synthesized 5 wt. %-yttria-stabilized zirconia (YSZ) films on stainless steel and glass substrates by pulsed laser deposition (PLD) at substrate temperatures between 60 and 600 °C and oxygen pressures from 0.1 to 1000 mTorr. While highly (101)-oriented tetragonal YSZ films are obtained at intermediate oxygen pressures, near complete (001)-oriented tetragonal films are achieved at lower oxygen pressures, with a full width at half maximum X-ray peak of only 0.4°. The results can be attributed to surface energy-induced orientation; that is, the lowest surface energy plane of the YSZ films changes from (101) plane at intermediate pressures to the (001) plane at lower oxygen pressures due to surface relaxation.

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Authors and Affiliations

  1. Lawrence Berkeley National Laboratory, Berkeley, CA, 94720, USA

    X. Zhang, P. Berdahl & S.S. Mao

  2. Institute of Electronic Structure and Laser, Foundation for Research and Technology – Hellas, 71110, Heraklion, Crete, Greece

    A. Klini & C. Fotakis

  3. Department of Mechanical Engineering, University of California at Berkeley, Berkeley, CA, 94720, USA

    S.S. Mao

Authors
  1. X. Zhang
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  2. P. Berdahl
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  3. A. Klini
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  4. C. Fotakis
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  5. S.S. Mao
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Correspondence to S.S. Mao.

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PACS

81.15.Fg; 83.85.Hf; 68.55.jm

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Zhang, X., Berdahl, P., Klini, A. et al. Transition of crystalline orientation of yttria-stabilized zirconia films grown by pulsed laser deposition. Appl. Phys. A 91, 407–410 (2008). https://doi.org/10.1007/s00339-008-4475-5

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  • DOI: https://doi.org/10.1007/s00339-008-4475-5

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