Skip to main content
SpringerLink
Log in

Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing

  • Published:
Applied Physics A Aims and scope Submit manuscript

Abstract

Tellurium nanoclusters were synthesized in (100) Si by ion implantation followed by annealing for 60 min with a 0.45 MHz high-frequency electromagnetic field. The results were compared with previous ones for a 30 min treatment. Structural studies were done by cross-sectional high resolution transmission electron microscopy and fast Fourier transformation of the images. The results show that for the 60 min treatment, the dynamics of nanocluster formation change, larger clusters are observed, some of which crystallized and were separated by high-resistive areas of amorphous Si.

The structural changes are correlated with the electrical resistance as measured by ac impedance spectroscopy. The conductance of the samples after the 60 min treatment, compared to as implanted samples, dropped by seven orders of magnitude in the range of low frequencies and about three orders of magnitude at higher frequencies. This drastic change of the electrophysical behaviour of the field treated nanomaterial is discussed in terms of potential barriers at the interface of different phases.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. A. Meldrum, R. Haglund, J. Linn, A. Boather, C.W. White, Adv. Mater. 13, 1431 (2001)

    Article  Google Scholar 

  2. P. Mazzoldi, G.W. Arnold, G. Battaglin, R. Bertonello, F. Gonella, Nucl. Instrum. Methods Phys. Res. B 91, 478 (1991)

    Article  ADS  Google Scholar 

  3. J.S. Williams, Mater. Sci. Eng. A 253, 8 (1998)

    Article  Google Scholar 

  4. M. Strobel, K.H. Heinig, W. Moeller, A. Meldrum, D.S. Zhou, C.W. White, R.A. Zuhr, Nucl. Instrum. Methods Phys. Res. B 147, 343 (1999)

    Article  ADS  Google Scholar 

  5. W. Ostwald, Z. Phys. Chem. 34, 495 (1990)

    Google Scholar 

  6. Y. Zhang, J. Drucker, J. Appl. Phys. 93, 9583 (2003)

    Article  ADS  Google Scholar 

  7. J. McLean, B. Krishnamachari, D.R. Reale, E. Chason, J. Sethna, B. Cooper, Phys. Rev. B 55, 1811 (1997)

    Article  ADS  Google Scholar 

  8. T. Mueller, K.H. Heinig, W. Moeller, Mater. Sci. Eng. B 101, 49 (2003)

    Article  Google Scholar 

  9. J. Cahn, Acta Metall. 9, 795 (1961)

    Article  Google Scholar 

  10. J. Cahn, Trans. Metallurg. Soc. AIME 242, 166 (1968)

    Google Scholar 

  11. M. Kalitzova, E. Vlakhov, Y. Marinov, K. Gesheva, V. Ignatova, O. Lebedev, C. Muntele, R. Gijbels, Vacuum 76, 325 (2004)

    Article  Google Scholar 

  12. M. Kalitzova, K. Gesheva, E. Vlakhov, Y. Marinov, D. Gogova, T. Ivanova, C. Angelov, N. Pashov, G. Zollo, G. Vitalli, Nucl. Instrum. Methods Phys. Res. B 229, 65 (2005)

    Article  ADS  Google Scholar 

  13. M. Kalitzova, A. Peeva, V. Ignatova, O. Lebedev, G. Zollo, G. Vitalli, Nucl. Instrum. Methods Phys. Res. B 242, 209 (2006)

    Article  ADS  Google Scholar 

  14. S. Simov, M. Kalitzova, D. Karpuzov, R. Yankov, C. Angelov, J. Faure, P. Bonhomme, G. Balossier, J. Appl. Phys. 79, 3470 (1996)

    Article  ADS  Google Scholar 

  15. T.L. Fare, Langmuir 11, 72 (1990)

    Google Scholar 

  16. A. Weiss, Z. Anorg. Allg. Chem. 273, 124 (1953)

    Google Scholar 

  17. A.P. Lambros, Phys. Stat. Solidi B 57, 793 (1973)

    Article  Google Scholar 

  18. J.W. Rau, C.R. Kannewurf, J. Phys. Chem. Solids 27, 1097 (1966)

    Article  Google Scholar 

  19. M.O. Orlandi, M.R. D Bomio, E. Longo, J. Appl. Phys. 96, 3811 (2004)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, Blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria

    M. Kalitzova, E. Vlakhov & Y. Marinov

  2. EMAT, Departement of Physics, University of Antwerp, Groenenborgerlaan 171, 2020, Antwerp, Belgium

    O.I. Lebedev

  3. Dipartimento di Energetica, Univ. La Sapienza, Via A. Scarpa 14, 00161, Roma, Italy

    G. Zollo

  4. Central Laboratory of Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, Blvd. Tzarigradsko chaussee 72, Sofia, Bulgaria

    K. Gesheva & T. Ivanova

Authors
  1. M. Kalitzova
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. O.I. Lebedev
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. G. Zollo
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. K. Gesheva
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. E. Vlakhov
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Y. Marinov
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. T. Ivanova
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to M. Kalitzova.

Additional information

PACS

61.80; 61.80.J; 61.70.A; 61.16.D

Rights and permissions

Reprints and permissions

About this article

Cite this article

Kalitzova, M., Lebedev, O., Zollo, G. et al. Dynamics of nanoclustering in Te+ implanted Si after application of high frequency electromagnetic field and thermal annealing. Appl. Phys. A 91, 515–519 (2008). https://doi.org/10.1007/s00339-008-4441-2

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s00339-008-4441-2

Keywords

Search

Navigation