Wetting behavior of Al–Si–Mg alloys on Si₃N₄/Si substrates: optimization of processing parameters

Abstract

The wetting behavior of Al–Si–Mg alloys on Si₃N₄/Si substrates has been investigated using the sessile drop technique. Based on a Taguchi experiment design, the effect of the following processing parameters on the contact angle (θ) and surface tension (σ_LV) was studied: processing time and temperature, atmosphere (Ar and N₂), substrate surface condition (with and without a silicon wafer), as well as the Mg and Si contents in the aluminium alloy. In nitrogen, non-wetting conditions prevail during the isothermal events while in argon a remarkable non-wetting to wetting transition leads to contact angles θ as low as 11±3° and a liquid surface tension σ_LV of 33± 10×10^-5 kJ/m². According to the multiple analysis of variance (Manova), the optimum conditions for minimizing the values of θ and σ_LV are as follows: temperature of 1100 °C, processing time of 90 min, argon atmosphere, no use of a silicon wafer, and the use of the Al-18% Mg-1% Si alloy. A verification test conducted under the optimized conditions resulted in a contact angle of θ=9±3° and a surface tension of σ_LV=29± 9×10^-5 kJ/m², both indicative of excellent wetting.