Abstract
We present the results of 800 and 400 nm wavelength, femtosecond laser pulse irradiation of a sample consisting of a metal film on thermally-grown oxide on silicon. On selected sites, cross-sectional transmission electron microscopy was performed to provide information on sub-surface changes not observable with surface scanning electron microscopy. A range of pulse energies in single-pulse irradiation exists for which the metal film was removed but the oxide was not appreciably thinned. For a sufficiently high pulse energy within this range, substantial defects were observed in the underlying silicon. Five infrared pulses of a relatively high fluence created significant defects, as well as producing polycrystalline material on top of the original oxide and metal. We discuss various factors which may play a role in the formation of the observed features.
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61.72.Ff; 68.37.Lp; 79.20.Ds
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Crawford, T., Yamanaka, J., Hsu, E. et al. Femtosecond laser irradiation of metal and thermal oxide layers on silicon: studies utilising cross-sectional transmission electron microscopy. Appl. Phys. A 91, 473–478 (2008). https://doi.org/10.1007/s00339-008-4433-2
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DOI: https://doi.org/10.1007/s00339-008-4433-2